GB01SLT12-263 GeneSiC Semiconductor, GB01SLT12-263 Datasheet

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GB01SLT12-263

Manufacturer Part Number
GB01SLT12-263
Description
Schottky Rectifier, 1200V, TO-263
Manufacturer
GeneSiC Semiconductor
Datasheet

Specifications of GB01SLT12-263

Repetitive Reverse Voltage Vrrm Max
1.2kV
Forward Voltage Vf Max
1.8V
Operating Temperature Range
-55°C To +175°C
Diode Case Style
TO-263
No. Of Pins
3
Diode Type
Schottky
Product
Schottky Silicon Carbide Diodes
Lead Free Status / Rohs Status
 Details
December 2010
Silicon Carbide Power
Schottky Diode
Features
• 1200 V Schottky rectifier
• 175 °C maximum operating temperature
• Zero reverse recovery charge
• Positive temperature coefficient of V
• Extremely fast switching speeds
• Temperature independent switching behavior
• Lowest figure of merit Q
Advantages
• Improved circuit efficiency (Lower overall cost)
• Low switching losses
• Ease of paralleling devices without thermal runaway
• Smaller heat sink requirements
• Industry's lowest reverse recovery charge
• Industry's lowest device capacitance
• Ideal for output switching of power supplies
• Best in class reverse leakage current at operating temperature
Maximum Ratings, at T
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
i
Power dissipation
Operating and storage temperature
Electrical Characteristics, at T
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
Thermal Characteristics
Thermal resistance, junction - case
Mechanical Properties
Mounting torque
1. Considering worst case Z
2
t value
Parameter
Parameter
http://www.genesicsemi.com/index.php/silicon-carbide-products/schottky-rectifiers/discrete-rectifiers
C
/I
j
= 175 °C, unless otherwise specified
F
th
conditions
j
= 175 °C, unless otherwise specified
F
Symbol
Symbol
T
I
I
V
I
R
F(RMS)
F,SM
j
F,max
P
i
, T
Q
V
2
C
M
RRM
I
I
t
thJC
F
R
s
tot
dt
F
C
stg
Preliminary Datasheet
http://www.genesicsemi.com
V
V
dI
R
R
= 200 V, f = 1 kHz, T
F
V
V
= 3 V, f = 1 kHz, T
/dt = 330 A/ s, T
V
T
T
R
T
R
R
I
C
C
= 1200 V, T
C
I
F
= 1200 V, T
= 950 V, I
F
= 25 °C, t
= 25 °C, t
= 1 A, T
= 25 °C, t
= 1 A, T
Conditions
Conditions
1
Package
• RoHS Compliant
Applications
• Power Factor Correction (PFC)
• Switched-Mode Power Supply (SMPS)
• Solar Inverters
• Wind Turbine Inverters
• Motor Drives
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Voltage Clamping
• High Voltage Multipliers
T
T
T
C
C
C
= 25 °C
150 °C
150 °C
TO – 263
j
2
j
= 175 °C
F
p
p
= 25 °C
p
j
= 10 ms
= 10 ms
= 10 μs
j
= 175 °C
= 25 °C
I
F,max
j
= 150 °C
j
= 25 °C
j
= 25 °C
Case
min.
PIN 1
PIN 2
GB01SLT12-263
-55 to 175
V
Q
Values
Values
I
1200
F
1.65
3.05
< 15
3.54
typ.
RRM
C
tbd
tbd
tbd
0.6
42
36
1
2
1
5
4
7
max.
300
1.8
30
=
=
=
1200 V
1 A
4 nC
Page 1 of 4
°C/W
Unit
Unit
Nm
A
μA
nC
°C
pF
W
ns
V
A
A
A
A
V
CASE
2
s

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GB01SLT12-263 Summary of contents

Page 1

... kHz 200 kHz thJC M Preliminary Datasheet http://www.genesicsemi.com GB01SLT12-263 Package • RoHS Compliant Case PIN 1 PIN – 263 Applications • Power Factor Correction (PFC) • Switched-Mode Power Supply (SMPS) • Solar Inverters • Wind Turbine Inverters • Motor Drives • ...

Page 2

... Figure 1: Typical Forward Characteristics Figure 3: Typical Power Derating Curve Figure 5: Typical Junction Capacitance versus Reverse Voltage Characteristics December 2010 Figure 2: Typical Reverse Characteristics Figure 4: Typical Current Derating Curves ( Figure 6: Typical Switching Energy versus Reverse Voltage Characteristics Preliminary Datasheet http://www.genesicsemi.com GB01SLT12-263 1 / 400 μ Page ...

Page 3

... Package Dimensions: TO-263 NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS 3. CONTROLLED LEAD COPLANARITY <D>0.004 INCH MAXIMUM December 2010 =150 O C Figure 8: Typical Transient Thermal Impedance C PACKAGE OUTLINE Preliminary Datasheet http://www.genesicsemi.com GB01SLT12-263 Page ...

Page 4

... Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. December 2010 Revision History Revision Comments 1 Second generation release Preliminary Datasheet http://www.genesicsemi.com GB01SLT12-263 Supersedes GA01SLT12-263 Page ...

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