GBU806 Taiwan Semiconductor, GBU806 Datasheet - Page 2

• Manufacturer Part Number: GBU806
• Description: BRIDGE RECTIFIER, 1PH, 8A, 800V THD
• Manufacturer: Taiwan Semiconductor

Specifications of GBU806

• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 800V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 800V
• Rms Voltage (max): 560V
• Peak Non-repetitive Surge Current (max): 200A
• Avg. Forward Curr (max): 8A
• Rev Curr: 5uA
• Forward Voltage: 1.1V
• Package Type: Case GBU
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

175
150
125
100
100
4.0
2.0
1.0
0.4
0.2
0.1
25
75
50
40
20
10
0.6
FIG.1- MAXIMUM NON-REPETITIVE FORWARD
FIG.3- TYPICAL INSTANTANEOUS FORWARD
1
SURGE CURRENT PER BRIDGE ELEMENT
CHARACTERISTICS PER BRIDGE ELEMENT
0.7
2
INSTANTANEOUSFORWARD VOLTAGE. (V)
RATINGS AND CHARACTERISTIC CURVES (GBU801 THRU GBU807)
0.8
NUMBER OF CYCLES AT 60Hz
5
0.9
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
10
1.0
Tj=150 C
8.3ms Single Half Sine Wave
0
20
1.1
m
1.2
50
1.3
100
0.01
500
100
0.1
10
10
8
6
2
4
0
1
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.2-MAXIMUM FORWARD CURRENT DERATING
0
0
HEAT-SINK MOUNTG
3.2 x 3.2 x 0.12" THK
(8.2 x 8.2 x 0.3 cm)AI. PLATE
CURVE
PER BRIDGE ELEMENT
Tj=150 C
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
20
50-400V
600-1000V
0
40
50
CASE TEMPERATURE. ( C)
Tj=25 C
60
0
100
80
o
100
150