PESD6V0L2UU NXP Semiconductors, PESD6V0L2UU Datasheet - Page 5

• Manufacturer Part Number: PESD6V0L2UU
• Description: DIODE,TVS,UNI DIR,6V,60W,SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD6V0L2UU

• Reverse Stand-off Voltage Vrwm: 6V
• Breakdown Voltage Range: 6.4V To 7.2V
• Clamping Voltage Vc Max: 13.5V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 5.5A
• Diode Case Style: SOT-323
• No. Of: RoHS Compliant

NXP Semiconductors
6. Characteristics
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
Table 9.
T
[1]
[2]
[3]
[4]
Symbol
V
I
V
C
V
r
RM
dif
amb
RWM
BR
CL
d
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 or 2 to pin 3.
= 25 C unless otherwise specified.
Characteristics
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU
PESD6V0L2UU
PESD5V0L2UU; PESD6V0L2UU
Rev. 01 — 11 March 2009
Low capacitance unidirectional ESD protection diodes
Conditions
V
V
V
V
I
f = 1 MHz; V
I
I
R
PP
R
RWM
RWM
RWM
RWM
= 5 mA
= 5 mA
= 5.5 A
= 4.0 V
= 4.3 V
= 5.0 V
= 6.0 V
R
= 0 V
[3][4]
[1]
[2]
[1]
[2]
Min
-
-
-
-
-
-
5.8
6.4
-
-
-
-
-
-
-
-
Typ
-
-
20
1.5
430
310
6.2
6.8
19
38
17
34
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
5.0
6.0
90
18
-
-
6.6
7.2
23
46
20
40
13
13.5
25
30
Unit
V
V
nA
nA
nA
nA
V
V
pF
pF
pF
pF
V
V
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