MMBZ9V1AL NXP Semiconductors, MMBZ9V1AL Datasheet - Page 4

• Manufacturer Part Number: MMBZ9V1AL
• Description: DIODE,DUAL TVS,UNI DIR,40W,6V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ9V1AL

• Reverse Stand-off Voltage Vrwm: 6V
• Breakdown Voltage Range: 8.65V To 9.56V
• Clamping Voltage Vc Max: 14V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 1.7A
• Diode Case Style: SOT-23
• No.: RoHS Compliant

NXP Semiconductors
5. Limiting values
MMBZXAL_SER_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
I
Per device
P
PPM
PPM
tot
Limiting values
Parameter
rated peak pulse power
rated peak pulse current
total power dissipation
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Conditions
t
t
T
p
p
amb
= 10/1000 μs
= 10/1000 μs
≤ 25 °C
MMBZxAL series
[1][2]
[1][2]
[3]
[4]
[4]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
24
40
3
2.76
2.5
1.7
1.7
2.35
1.9
1.6
1.4
1
0.87
265
290
360
Unit
W
W
A
A
A
A
A
A
A
A
A
A
A
mW
mW
mW
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