MMBZ6V8AL NXP Semiconductors, MMBZ6V8AL Datasheet - Page 13

• Manufacturer Part Number: MMBZ6V8AL
• Description: DIODE,DUAL TVS,UNI DIR,40W,4.5V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ6V8AL

• Reverse Stand-off Voltage Vrwm: 4.5V
• Breakdown Voltage Range: 6.46V To 7.14V
• Clamping Voltage Vc Max: 9.6V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 2.5A
• Diode Case: RoHS Compliant

NXP Semiconductors
10. Package outline
11. Packing information
MMBZXAL_SER_2
Product data sheet
Table 11.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Fig 11. Package outline SOT23 (TO-236AB)
For further information and the availability of packing methods, see
Packing methods
Package
SOT23
2.5
2.1
Rev. 02 — 10 December 2009
Dimensions in mm
Low capacitance unidirectional double ESD protection diodes
1.4
1.2
1
Description
4 mm pitch, 8 mm tape and reel
3.0
2.8
1.9
3
2
0.48
0.38
MMBZxAL series
0.45
0.15
Section
1.1
0.9
0.15
0.09
[1]
04-11-04
15.
Packing quantity
3000
-215
© NXP B.V. 2009. All rights reserved.
10000
-235
13 of 17