SI1141-A10-GMR Silicon Laboratories Inc, SI1141-A10-GMR Datasheet - Page 5

SENS IR PROXIMITY AMB LT 8-ODFN

SI1141-A10-GMR

Manufacturer Part Number
SI1141-A10-GMR
Description
SENS IR PROXIMITY AMB LT 8-ODFN
Manufacturer
Silicon Laboratories Inc
Datasheet

Specifications of SI1141-A10-GMR

Mfg Application Notes
Si1141 Touchless Lavatory AppNote Si114x Designer's Guide AppNote Si114x Overlay Considerations AppNote Si1141 Cheek Detection in Smartphones C8051F990/Si1141 Smoke Detection AppNote Si114x irLED Guide AppNote Si114x Control Panel Guide AppNote
Output Type
Digital - I²C
Sensor Type
Proximity, Infrared and Ambient Light
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
336-1968
SI1141-A10-GM

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1141-A10-GMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
Company:
Part Number:
SI1141-A10-GMR
Quantity:
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Company:
Part Number:
SI1141-A10-GMR
Quantity:
2 500
Table 3. Performance Characteristics
Table 2. Absolute Maximum Ratings
Parameter
I
I
I
I
Peak IDD while LED1,
LED2, or LED3 is Actively
Driven
Notes:
Parameter
V
Operating Temperature
Storage Temperature
LED1, LED2, LED3 Voltage
INT, SCL, SDA Voltage
Maximum total current through
LED1, LED2 and LED3
Maximum total current through
GND
ESD Rating
DD
DD
DD
DD
DD
1. Unless specifically stated in "Conditions", electrical data assumes ambient light levels < 1 klx.
2. Proximity-detection performance may be degraded, especially when there is high optical crosstalk, if the LED supply
3. Guaranteed by design and characterization.
4. Represents the time during which the device is drawing a current equal to I
OFF Mode
Standby Mode
Standby Mode
Actively Measuring
Supply Voltage
and voltage drop allow the driver to saturate and current regulation is lost.
Assumes default settings.
Symbol
I
active
I
I
I
off
sb
sb
V
Without LED influence, V
at V
at V
Charged-Device Model
DD
Human Body Model
1
SDA, and INT not included)
DD
DD
No ALS / PS Conversions
No ALS / PS Conversions
< V
Machine Model
Conditions
= 0 V, T
= 0 V, T
DD_OFF
No I
No I
V
V
Conditions
V
Rev. 1.1
DD
DD
DD
2
2
A
A
C Activity
C Activity
(leakage from SCL,
= 1.8 V
= 3.3 V
=3.3 V
< 85 °C
< 85 °C
DD
= 3.3 V
active
–0.3
–0.5
–0.5
Min
–40
–65
for power estimation purposes.
Min
Si1141/42/43
Typ
Typ
240
150
1.4
4.3
8
Max
500
600
225
3.6
3.6
85
85
4
2
2
1000
Max
500
5.5
Units
mA
mA
Units
°C
°C
kV
kV
V
V
V
V
mA
mA
nA
nA
µA
5

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