KMZ52,118 NXP Semiconductors, KMZ52,118 Datasheet - Page 4

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KMZ52,118

Manufacturer Part Number
KMZ52,118
Description
IC MAGNETIC FIELD SENSOR 16-SOIC
Manufacturer
NXP Semiconductors
Type
Special Purposer
Datasheet

Specifications of KMZ52,118

Sensing Range
16mV/V
Voltage - Supply
5V ~ 8V
Output Type
Analog
Package / Case
16-SOIC (0.154", 3.90mm Width)
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Supply Voltage (min)
5 V
Supply Voltage (max)
8 V
Power Dissipation
130mW
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Package Type
SO
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
8V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-
Current - Output (max)
-
Features
-
Operating Temperature
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2426-2
934055701118
KMZ52 /T3
Philips Semiconductors
CHARACTERISTICS
T
Notes
1. Due to the ratiometric output, the same supply voltage (V
2.
3. Bridge resistance die 1: between pins 5 and 12; bridge resistance die 2: between pins 2 and 3.
4.
2000 Jun 09
V
H
S
TCS
k
TCV
R
TCR
V
TCV
FH
R
A
R
TCR
I
t
R
V
R
f
bridge
flip
flip
SX
SYMBOL
CC
offset
comp
isol
bridge
comp
flip
isol
isol_dice
Magnetic Field Sensor
k
TCR
O
offset
SX
bridge
flip
= 25 C; V
=
bridge
100
bridge supply voltage
field strength operating range in sensor
plane
sensitivity
temperature coefficient of sensitivity
sensitivity synchronism
temperature coefficient of output voltage V
bridge resistance
temperature coefficient of bridge
resistance
offset voltage per supply voltage
temperature coefficient of offset voltage
hysteresis of output voltage
resistance of compensation coil
field factor of compensation coil
resistance of set/reset coil
temperature coefficient of resistance of
set/reset coil
recommended flipping current for stable
operation
flip pulse duration
isolating resistance
voltage between isolated systems
isolating resistance between dice
operating frequency
angle die-to-die
angle dice-to-package
=
CC1
100
A
----------------------------- - %
A
comp1
comp2
= V
R
-------------------------------------------------------------- -
bridge T
R
CC2
bridge T
S
S
PARAMETER
1
2
= 5 V; unless otherwise specified.
2
1
R
T
bridge T
2
T
1
1
Where T
note 1
open circuit
T
note 2
T
note 3
T
note 4
T
note 5
note 6
note 7
T
note 8
note 8
die 1 to die 2
note 9
note 9
s
bridge
bridge
bridge
flip
4
CC
= 25 to +125 C
CC
= 25 to +125 C
1
= 5 V;
) must be applied to both dice in one KMZ52 device.
CONDITIONS
=
= 25 to +125 C
= 25 to +125 C;
= 25 to +125 C;
25 C T
;
2
=
125 C
12
92
1
100
19
1
1
1
1
0
88
MIN.
0.2
1.5
3
800
5
.
5
16
0.31
100
2
0.3
0
0
170
22
2
0.39
3
90
0
TYP.
0.4
1000
Product specification
8
+0.2
108
3
+1.5
+3
2
300
25
3
100
50
1
92
+5
MAX.
1200 mA
KMZ52
V
kA/m
%/K
%
%/K
k
%/K
mV/V
%FS
%/K
M
V
M
MHz
deg
deg
mV/V
------------- -
------------ -
A/m
--------- -
kA/m
mA
UNIT
s
V/V
K

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