US1881ESE Melexis Inc, US1881ESE Datasheet - Page 25

IC LATCH CMOS MP TSOT23-3

US1881ESE

Manufacturer Part Number
US1881ESE
Description
IC LATCH CMOS MP TSOT23-3
Manufacturer
Melexis Inc
Type
Bipolar Latchr
Datasheets

Specifications of US1881ESE

Sensing Range
9.5mT Trip, -9.5mT Release
Voltage - Supply
3.5 V ~ 24 V
Current - Supply
5mA
Current - Output (max)
50mA
Output Type
Digital, Open Drain
Operating Temperature
-40°C ~ 85°C
Package / Case
TSOT-23-3, TSOT-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Other names
US1881ESETR
Graph 8, Slide-by with Magnet A
Change in Activation Distance With TC
There is a 17% difference in flux density over the entire temperature range compared with the fixed-tem-
perature case in Graph 7. Note that because of the negative temperature coefficient of the magnet, the neg-
ative temperature (-40
flux density.
Graph 9 shows how the air gap tolerance and temperature coefficient add together and cause tolerance
buildup in the Hall Effect system.
Graph 9, Slide-by Method with Magnet A
Change in Activation distance with Air Gap & TC
The two plotted lines in Graph 9 show the minimum and maximum possible cases when temperature and
air gap are considered. The overall difference in distance between min. BRP and max. BOP is slightly
larger because of the sum of tolerances being considered. This design example has shown the tolerance
buildup of air gap, benefits of slope, Hall IC BOP to BRP variations and magnet Tc. We have not con-
sidered the variation of initial flux density, which you must obtain from a magnet supplier.
-1.5
-1
-0.75
-1
-0.5
-0.5
Distance (mm)
-0.25
Distance (mm)
-100
-200
-300
-400
0
400
300
200
100
C) adds flux density to the magnet, while the positive temperature (85
-100
-200
-300
-400
0
400
300
200
100
0
0
0
0.5
0.25
A ir Gap = 1.5mm @ -40
Air Gap = 2.5mm @ 80
0.5
1
0.75
Temp -40
1.5
Temp = 85
Temp = 25
1
o
C
o
o
o
o
C
C
C
C
3-33
Section 3 - Applications
0
C) reduces

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