PIC18F2431T-I/MM Microchip Technology, PIC18F2431T-I/MM Datasheet - Page 17
![16 KB Flash, 768 RAM, 22 I/O 28 QFN-S 6x6m T/R](/photos/6/81/68120/150-28-qfn_sml.jpg)
PIC18F2431T-I/MM
Manufacturer Part Number
PIC18F2431T-I/MM
Description
16 KB Flash, 768 RAM, 22 I/O 28 QFN-S 6x6m T/R
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC16F818-ISO.pdf
(6 pages)
3.PIC18F2331-ISO.pdf
(392 pages)
4.PIC18F2331-ISO.pdf
(8 pages)
5.PIC18F2331-ISO.pdf
(6 pages)
6.PIC18F2331-ISO.pdf
(16 pages)
7.PIC18LF2331-ISO.pdf
(40 pages)
Specifications of PIC18F2431T-I/MM
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, Power Control PWM, QEI, POR, PWM, WDT
Number Of I /o
24
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
I3-DB18F4431 - BOARD DAUGHTER ICEPIC3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F2431T-I/MM
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
3.3
Data EEPROM is accessed one byte at a time via an
Address Pointer (register pair EEADR:EEADRH) and a
data latch (EEDATA). Data EEPROM is written by load-
ing EEADR:EEADRH with the desired memory loca-
tion, EEDATA with the data to be written, and initiating
a memory write by appropriately configuring the
EECON1 and EECON2 registers. A byte write auto-
matically erases the location and writes the new data
(erase-before-write).
When using the EECON1 register to perform a data
EEPROM write, both the EEPGD and CFGS bits must
be cleared (EECON1<7:6> = 00). The WREN bit must
be set (EECON1<2> = 1) to enable writes of any sort,
and this must be done prior to initiating a write
sequence. The write sequence is initiated by setting the
WR bit (EECON1<1> = 1). It is strongly recommended
that the WREN bit be set only when absolutely
necessary.
To help prevent inadvertent writes when using the
EECON1 register, EECON2 is used to “enable” the WR
bit. This register must be sequentially loaded with 55h
and then AAh, immediately prior to asserting the WR bit
in order for the write to occur.
The write begins on the falling edge of the 4th SCLK
after the WR bit is set. It ends when the WR bit is
cleared by hardware.
After the programming sequence terminates, SCLK
must still be held low for the time specified by
parameter P10 to allow high voltage discharge of the
memory array.
FIGURE 3-8:
2010 Microchip Technology Inc.
SCLK
SDATA
Poll WR bit
4-bit Command
Data EEPROM Programming
1
0
2
0
3
0
SDATA
4
SCLK
0
P5
DATA EEPROM WRITE TIMING
BSF EECON1, WR
1
4-bit Command
1
0
2
2
0
15 16
3
0
4
0
P5A
P5
MOVF EECON1, W, 0
1
PIC18F2331/2431/4331/4431
2
SDATA = Input
SDATA = Input
15 16
P5A
4-bit Command
Poll WR bit, Repeat until Clear
1
0
FIGURE 3-7:
2
0
3
0
(see below)
4
0
P5
MOVWF TABLAT
1
No
2
Unlock Sequence
15 16
55h - EECON2
AAh - EECON2
PROGRAM DATA FLOW
Enable Write
Set Address
Start Write
Sequence
Set Data
WR bit
Clear ?
Done
Start
Done
P5A
?
Yes
Yes
(see Figure 4-4)
Shift Out Data
SDATA = Output
DS30500B-page 17
No
P10
16-bit Data
Payload
1
n
2
n