PIC16LF870T-I/SS Microchip Technology, PIC16LF870T-I/SS Datasheet - Page 119
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
PIC16LF870T-I/SS
Manufacturer Part Number
PIC16LF870T-I/SS
Description
IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,SSOP,28PIN,PLASTIC
Manufacturer
Microchip Technology
Series
PIC® 16Fr
Specifications of PIC16LF870T-I/SS
Rohs Compliant
YES
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Connectivity
UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
22
Program Memory Size
3.5KB (2K x 14)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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14.0
Absolute Maximum Ratings †
Ambient temperature under bias................................................................................................................ .-55 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Voltage on MCLR with respect to V
Voltage on RA4 with respect to Vss ..................................................................................................................0 to +8.5V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB, and PORTE (combined) (Note 3) ...................................................200 mA
Maximum current sourced by PORTA, PORTB, and PORTE (combined) (Note 3)..............................................200 mA
Maximum current sunk by PORTC and PORTD (combined) (Note 3) .................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined) (Note 3) ............................................................200 mA
2003 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2: Voltage spikes below V
3: PORTD and PORTE are not implemented on the 28-pin devices.
ELECTRICAL CHARACTERISTICS
Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR pin, rather than
pulling this pin directly to V
DD
with respect to V
IK
OK
(V
DD
I
SS
(V
< 0 or V
pin ..............................................................................................................................250 mA
O
pin ...........................................................................................................................300 mA
< 0 or V
SS
I
SS
SS
SS
> V
............................................................................................................ -0.3 to +7.5V
(Note 2) ............................................................................................0 to +13.25V
O
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
(except V
DD
> V
.
)
DD
)
DD
, MCLR. and RA4) ......................................... -0.3V to (V
DD
x {I
DD
- ∑ I
OH
PIC16F870/871
} + ∑ {(V
DD
- V
OH
) x I
DS30569B-page 117
OH
} + ∑(V
DD
O
+ 0.3V)
l x I
20 mA
20 mA
OL
)
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