IAM-91563-TR1 Avago Technologies US Inc., IAM-91563-TR1 Datasheet - Page 6

• Manufacturer Part Number: IAM-91563-TR1
• Description: IC,Downconverter,GAAS,TSSOP,6PIN,PLASTIC
• Manufacturer: Avago Technologies US Inc.

Specifications of IAM-91563-TR1

• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IAM-91563 Applications
Information Introduction
The IAM-91563 is a miniature downconverter devel-
oped for use in superheterodyne receivers for commer-
cial wireless applications with RF bands from 800 MHz
to 6 GHz. Operating from only 3 volts, the IAM-91563 is
an excellent choice for use in low current applications
such as: 1.9 GHz Personal Communication Systems
(PCS) & Personal Handy System (PHS), 2 GHz Digital
European Cordless Telephone (DECT), and 800 MHz
cellular telephones (e.g., GSM, NADC, JDC). Combined
with Avago’s other RFICs and discrete components
housed in the same ultra-miniature SOT-363 package,
the IAM-91563 also provides flexible, building-block
solutions for WLAN’s and wireless datacomm such as
PCMCIA RF modems as well as many Industrial, Scien-
tific and Medical (ISM) systems operating at 900 MHz,
2.5 GHz, and 5.8 GHz.
The IAM-91563 is a 3-port, downconverting RFIC mixer
of the cascode (common source - common gate) type
that uses a low level (-5 dBm) local oscillator (LO) to
convert an RF signal in the 800 MHz to 6 GHz range to
an IF between 50 and 700 MHz. The basic mixing
function takes place in a cascode connected pair of
FETs as shown in Figure 17.
Figure 17. Cascode FET Mixer.
The received RF signal is connected to the gate of FET1
and the LO is applied to the gate of FET2. The purpose
of FET2 is to vary the transconductance of FET1 over
a highly nonlinear region at the rate of the LO fre-
quency. This produces the nonlinearity required for
frequency mixing to take place. This type of mixer is
also known as a “transconductance mixer.” The IF is
taken from the drain of FET2.
An advantage of the cascode type of design is the
inherent isolation between the gates of the two FETs
which results in very good LO-to-RF isolation. An inte-
grated buffer amplifier between the LO input and the
gate of FET2 not only increases the LO-RF isolation but
also reduces the amount of LO input power required by
the mixer.
LO
RF
FET 2
FET 1
IF
The IAM-91563 uses an innovative bias regulation cir-
cuit that realizes several benefits to the designer. First,
the IAM-91563 operates with a single, positive device
voltage from 1.5 to 5 volts with stable performance
over a wide temperature range. Second, a unique fea-
ture of the IAM-91563 allows the device current to be
easily increased by adding an external resistor to boost
device current and increase linearity.
Using a minimum of external components with a stan-
dard bias of 3 volts/9 mA and LO power of -5 dBm, the
IAM-91563 mixer achieves an RF to IF conversion gain
of 9 dB at 1.9 GHz with a noise figure of 8.5 dB and an
input third order intercept point of -6 dBm. LO-to-IF
isolation is greater than 35 dB. Setting the bias for the
higher linearity/higher current mode (approximately
16 mA) along with an LO drive level of -2 dBm will boost
the input IP
Test Circuit
The circuit shown in Figure 18 is used for 100% RF and
DC testing. The test circuit is impedance matched for an
RF of 1890 MHz and an IF of 250 MHz. The LO is set at
1640 MHz and -5 dBm for low side conversion. (High side
conversion with an LO of 2240 MHz would produce
similar performance.) The RF choke at the IF port is used
to provide DC bias. Tests in this circuit are used to
guarantee the G
rameters shown in the table of Electrical Specifications.
Figure 18. Test Circuit.
Specifications and Statistical Parameters
Several categories of parameters appear within this
data sheet. Parameters may be described with values
that are either “minimum or maximum,” “typical,” or
“standard deviations.”
The values for parameters are based on comprehen-
sive product characterization data, in which automated
measurements are made on of a minimum of 500 parts
taken from 3 non-consecutive process lots of semicon-
ductor wafers. The data derived from product charac-
terization tends to be normally distributed, e.g., fits the
standard “bell curve.”
250 MHz
IF
V
3
d
Z = 50
to approximately 0 dBm.
220 nH
500 pF
test
68 nH
, NF
100 pF
(2)
test
6
4.7 pF
, and Device Current (I
I=10.4 mm
0.5 pF
Z = 110
Z = 50
1890 MHz
1640 MHz
RF
LO
d
) pa-