DSPIC30F3013T-20E/SO Microchip Technology, DSPIC30F3013T-20E/SO Datasheet - Page 40
DSPIC30F3013T-20E/SO
Manufacturer Part Number
DSPIC30F3013T-20E/SO
Description
IC,DSP,16-BIT,CMOS,SOP,28PIN,PLASTIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F2011-20ISO.pdf
(210 pages)
3.DSPIC30F2011-20ISO.pdf
(6 pages)
4.DSPIC30F2011-20IP.pdf
(26 pages)
5.DSPIC30F3012-20ISO.pdf
(14 pages)
6.DSPIC30F3012-20ISO.pdf
(20 pages)
Specifications of DSPIC30F3013T-20E/SO
Rohs Compliant
YES
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
20
Program Memory Size
24KB (8K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
11.6
The procedure for erasing program memory (all code
memory and data memory) in low-voltage systems
(with V
different than the procedure for erasing program
memory in normal-voltage systems. Instead of using a
Bulk Erase operation, each region of memory must be
individually erased by row. Namely, all of the code
memory, executive memory and data memory must be
erased one row at a time. This procedure is detailed in
Table
TABLE 11-5:
DS70102K-page 40
Step 1: Exit the Reset vector.
0000
0000
0000
Step 2: Initialize NVMADR and NVMADRU to erase code memory and initialize W7 for row address updates.
0000
0000
0000
0000
Step 3: Set NVMCON to erase 1 row of code memory.
0000
0000
Step 4: Unlock the NVMCON to erase 1 row of code memory.
0000
0000
0000
0000
Step 5: Initiate the erase cycle.
0000
0000
0000
—
0000
0000
0000
0000
0000
Command
(Binary)
11-5.
DD
Erasing Program Memory in
Low-Voltage Systems
between 2.5 volts and 4.5 volts) is quite
040100
040100
000000
EB0300
883B16
883B26
200407
24071A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
—
000000
000000
A9E761
000000
000000
(Hexadecimal)
SERIAL INSTRUCTION EXECUTION FOR ERASING PROGRAM MEMORY
(EITHER IN LOW-VOLTAGE OR NORMAL-VOLTAGE SYSTEMS)
Data
GOTO 0x100
GOTO 0x100
NOP
CLR
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #WR
NOP
NOP
Externally time ‘P13a’ ms (see
Timing
NOP
NOP
BCLR NVMCON, #WR
NOP
NOP
Requirements”)
W6
W6, NVMADR
W6, NVMADRU
#0x40, W7
#0x4071, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
Due to security restrictions, the FBS, FSS and FGS
register cannot be erased in low-voltage systems.
Once any bits in the FGS register are programmed to
‘0’, they can only be set back to ‘1’ by performing a Bulk
Erase in a normal-voltage system. Alternatively, a Seg-
ment Erase operation can be performed instead of a
Bulk Erase.
Normal-voltage systems can also be used to erase
program memory as shown in
since this method is more time-consuming and does
not clear the code-protect bits, it is not recommended.
Note:
Description
Section 13.0 “AC/DC Characteristics and
Program memory must be erased before
writing any data to program memory.
© 2010 Microchip Technology Inc.
Table
11-5. However,