DSPIC30F1010T-30I/MM Microchip Technology, DSPIC30F1010T-30I/MM Datasheet - Page 24

• Manufacturer Part Number: DSPIC30F1010T-30I/MM
• Description: 6KB, Flash, 256bytes-RAM, 30MIPS, 21I/O, 16-bit Family,nanoWatt 28 QFN-S 6x6mm T
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F1010T-30I/MM

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 21
• Program Memory Size: 6KB (2K x 24)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-QFN
• Data Bus Width: 16 bit
• Data Ram Size: 256 B
• Interface Type: I2C, SPI, UART
• Maximum Clock Frequency: 30 MHz
• Number Of Programmable I/os: 21
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52713-733, 52714-737, 53276-922, EWDSPIC
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, DM240002, DM300023, DM330011
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 6 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DM300023 - KIT DEMO DSPICDEM SMPS BUCK
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: DSPIC30F1010T-30I/MMTR

TABLE 8-1:
DS70102K-page 24
0x0
0x1
0x2
0x3
0x4
0x5
0x6
0x7
0x8
0x9
0xA
0xB
Note 1:
Opcode
2:
One row of code memory consists of (32) 24-bit words. Refer to
One row of data EEPROM consists of (16) 16-bit words. Refer to
SCHECK
READD
READP
Reserved
PROGD
PROGP
PROGC
ERASEB
ERASED
ERASEP
QBLANK
QVER
Mnemonic
PROGRAMMING EXECUTIVE COMMAND SET
(2)
(1)
(2)
(1)
Length
words)
(16-bit
N/A
19
51
1
4
4
4
2
3
3
3
1
Time Out
1 ms/row Read N 16-bit words of data EEPROM, Configuration registers or
1 ms/row Read N 24-bit instruction words of code memory starting from
5 ms/row Erase rows of data EEPROM from specified address.
5 ms/row Erase rows of code memory from specified address.
300 ms
1 ms
5 ms
5 ms
5 ms
5 ms
1 ms
N/A
Sanity check.
device ID starting from specified address.
specified address.
This command is reserved. It will return a NACK.
Program one row of data EEPROM at the specified address, then
verify.
Program one row of code memory at the specified address, then
verify.
Write byte or 16-bit word to specified Configuration register.
Bulk Erase (entire code memory or data EEPROM), or erase by
segment.
Query if the code memory and data EEPROM are blank.
Query the programming executive software version.
Table 5-2
Table 5-3
Description
for device-specific information.
for device-specific information.
© 2010 Microchip Technology Inc.