ST62T08CB6 STMicroelectronics, ST62T08CB6 Datasheet - Page 80

• Manufacturer Part Number: ST62T08CB6
• Description: IC, 8BIT MCU OTP 1K, 62T08, DIP20
• Manufacturer: STMicroelectronics

Specifications of ST62T08CB6

• Controller Family/series: ST6
• Core Size: 8bit
• No. Of I/o's: 12
• Program Memory Size: 1KB
• Ram Memory Size: 64Byte
• Cpu Speed: 8MHz
• Oscillator Type: External Only
• No. Of Timers: 1
• Digital Ic Case: RoHS Compliant
• Peripherals: ADC, LVD
• Rohs Compliant: Yes
• Processor Series: ST62T0x
• Core: ST6
• Data Bus Width: 8 bit
• Program Memory Type: EPROM
• Data Ram Size: 64 B
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 2
• Operating Supply Voltage: 3 V to 6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Package / Case: PDIP-20
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit
• Lead Free Status / Rohs Status: Details

ST6208C/ST6209C/ST6210C/ST6220C
EMC CHARACTERISTICS (Cont’d)
10.7.3 ESD Pin Protection Strategy
To protect an integrated circuit against Electro-
Static Discharge the stress must be controlled to
prevent degradation or destruction of the circuit el-
ements. The stress generally affects the circuit el-
ements which are connected to the pads but can
also affect the internal devices when the supply
pads receive the stress. The elements to be pro-
tected must not receive excessive current, voltage
or heating within their structure.
An ESD network combines the different input and
output ESD protections. This network works, by al-
lowing safe discharge paths for the pins subjected
to ESD stress. Two critical ESD stress cases are
presented in
pins.
Figure 59. Positive Stress on a Standard Pad vs. V
Figure 60. Negative Stress on a Standard Pad vs. V
80/104
1
Main path
Path to avoid
Main path
Figure 59
V
V
V
V
DD
DD
SS
SS
and
Figure 60
(3a)
(3b)
(3a)
(3b)
for standard
OUT
OUT
SS
Standard Pin Protection
To protect the output structure the following ele-
ments are added:
– A diode to V
– A protection device between V
To protect the input structure the following ele-
ments are added:
– A resistor in series with the pad (1)
– A diode to V
– A protection device between V
DD
(4)
(4)
IN
IN
DD
DD
(3a) and a diode from V
(2a) and a diode from V
(2a)
(2b)
(2a)
(2b)
(1)
(1)
DD
DD
and V
and V
SS
SS
SS
SS
V
V
V
V
(3b)
(2b)
(4)
(4)
DD
SS
DD
SS