LM5111-1M National Semiconductor, LM5111-1M Datasheet - Page 7

• Manufacturer Part Number: LM5111-1M
• Description: DRIVER, GATE, DUAL 5A, 5111, SOIC8
• Manufacturer: National Semiconductor

Specifications of LM5111-1M

• Device Type: MOSFET
• Module Configuration: Low Side
• Peak Output Current: 5A
• Output Resistance: 30ohm
• Input Delay: 25ns
• Output Delay: 25ns
• Supply Voltage Range: 3.5V To 14V
• Driver Case Style: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Characteristics
Detailed Operating Description
LM5111 dual gate driver consists of two independent and
identical driver channels with TTL compatible logic inputs
and high current totem-pole outputs that source or sink
current to drive MOSFET gates. The driver output consist of
a compound structure with MOS and bipolar transistor oper-
ating in parallel to optimize current capability over a wide
output voltage and operating temperature range. The bipolar
device provides high peak current at the critical threshold
region of the MOSFET VGS while the MOS devices provide
rail-to-rail output swing. The totem pole output drives the
MOSFET gate between the gate drive supply voltage V
and the power ground potential at the V
The control inputs of the drivers are high impedance CMOS
buffers with TTL compatible threshold voltages. The LM5111
pinout was designed for compatibility with industry standard
gate drivers in single supply gate driver applications.
The two driver channels of the LM5111 are designed as
identical cells. Transistor matching inherent to integrated
circuit manufacturing ensures that the AC and DC pe-
formance of the channels are nearly identical. Closely
matched propagation delays allow the dual driver to be
Delay Time vs Temperature
UVLO Thresholds and Hysteresis vs Temperature
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pin.
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operated as a single with inputs and output pins connected.
The drive current capability in parallel operation is precisely
2X the drive of an individual channel. Small differences in
switching speed between the driver channels will produce a
transient current (shoot-through) in the output stage when
two output pins are connected to drive a single load. The
efficiency loss for parallel operation has been characterized
at various loads, supply voltages and operating frequencies.
The power dissipation in the LM5111 increases be less than
1% relative to the dual driver configuration when operated as
a single driver with inputs/ outputs connected.
An Under Voltage Lock Out (UVLO) circuit is included in the
LM5111 , which senses the voltage difference between V
and the chip ground pin, V
difference falls below 2.8V both driver channels are disabled.
The UVLO hysteresis prevents chattering during brown-out
conditions and the driver will resume normal operation when
the V
3.0V.
The LM5111 is available in dual non-inverting (-1), dual
Inverting (-2) and the combination inverting plus non-
inverting (-3) configurations. All three configurations are of-
fered in the SOIC-8 plastic package.
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to V
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RDSON vs Supply Voltage
differential voltage exceeds approximately
20112318
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. When the V
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to V
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20112317
voltage
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