LM5111-1M National Semiconductor, LM5111-1M Datasheet - Page 5

• Manufacturer Part Number: LM5111-1M
• Description: DRIVER, GATE, DUAL 5A, 5111, SOIC8
• Manufacturer: National Semiconductor

Specifications of LM5111-1M

• Device Type: MOSFET
• Module Configuration: Low Side
• Peak Output Current: 5A
• Output Resistance: 30ohm
• Input Delay: 25ns
• Output Delay: 25ns
• Supply Voltage Range: 3.5V To 14V
• Driver Case Style: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SWITCHING CHARACTERISTICS
td1
td2
t
t
LATCHUP PROTECTION
r
f
Electrical Characteristics
T
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Timing Waveforms
Symbol
J
= −40˚C to +125˚C, V
Propagation Delay Time Low to
High, IN rising (IN to OUT)
Propagation Delay Time High to
Low, IN falling (IN to OUT)
Rise Time
Fall Time
AEC - Q100, Method 004
Parameter
CC
= 12V, V
(a)
EE
= 0V, No Load on OUT_A or OUT_B, unless otherwise specified.
FIGURE 1. (a) Inverting, (b) Non-Inverting
(Continued)
C
1
C
1
C
1
C
1
T
J
LOAD
LOAD
LOAD
LOAD
= 150˚C
= 2 nF, see Figure
= 2 nF, see Figure
= 2.0 nF, see Figure
= 2 nF, see Figure
Conditions
20112305
5
Min
Typ
500
25
25
14
12
(b)
Max
40
40
25
25
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Units
20112306
mA
ns
ns
ns
ns