LPC1226FBD64/301 NXP Semiconductors, LPC1226FBD64/301 Datasheet - Page 44
![MCU, 96K FLASH, CORTEX-M0, 64LQFP](/photos/19/1/190186/ge64lqfp05-40_sml.jpg)
LPC1226FBD64/301
Manufacturer Part Number
LPC1226FBD64/301
Description
MCU, 96K FLASH, CORTEX-M0, 64LQFP
Manufacturer
NXP Semiconductors
Datasheet
1.LPC1224FBD48201.pdf
(60 pages)
Specifications of LPC1226FBD64/301
Rohs Compliant
YES
Featured Product
LPC122x Cortex-M0 Microcontrollers
Core Processor
ARM Cortex-M0
Core Size
32-Bit
Speed
45MHz
Connectivity
I²C, IrDA, Microwire, SPI, SSI, SSP, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, POR, WDT
Number Of I /o
55
Program Memory Size
96KB (96K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Controller Family/series
LPC1200
No. Of I/o's
55
Ram Memory Size
8KB
Cpu Speed
30MHz
No. Of Timers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5162
LPC1226FBD64/301
LPC1226FBD64/301
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LPC1226FBD64/301
Manufacturer:
SEC
Quantity:
24
Company:
Part Number:
LPC1226FBD64/301,1
Manufacturer:
NXP Semiconductors
Quantity:
10 000
NXP Semiconductors
11. Dynamic characteristics
LPC122X
Objective data sheet
11.1 Flash memory
11.2 External clock
Table 11.
T
[1]
[2]
Table 12.
T
[1]
[2]
Symbol
t
t
N
t
Symbol
t
t
f
T
t
t
er
prog
ret
osc
CHCX
CLCX
CLCH
CHCL
amb
amb
Fig 18. External clock timing (with an amplitude of at least V
cy(clk)
endu
Erase and programming times are valid over the lifetime of the device (minimum 20000 cycles).
Number of program/erase cycles.
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply
voltages.
=
=
40
40
Dynamic characteristic: flash memory
Dynamic characteristic: external clock
C to +85
C to +85
Parameter
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
Parameter
erase time
programming
time
endurance
retention time
All information provided in this document is subject to legal disclaimers.
C; V
C; V
Rev. 1.2 — 29 March 2011
DD(3V3)
DD(3V3)
Conditions
for one page (512 byte)
for one sector (4 kB)
for all sectors; mass
erase
one word (4 bytes)
four sequential words
128 bytes (one row of 32
words)
over specified ranges.
over specified ranges.
t
CHCL
Conditions
t
CLCX
32-bit ARM Cortex-M0 microcontroller
Min
1
40
T
T
-
-
cy(clk)
cy(clk)
[1]
T
cy(clk)
0.4
0.4
t
CLCH
t
CHCX
[1]
[1]
[1]
[1]
[1]
[1]
[2]
i(RMS)
Min
-
-
-
-
-
20000
10
Typ
-
-
-
-
-
-
= 200 mV)
[2]
002aaa907
LPC122x
© NXP B.V. 2011. All rights reserved.
Max
20
162
20
49
194
765
-
-
Max
25
1000
-
-
5
5
Unit
ms
ms
ms
s
s
s
cycles
years
Unit
MHz
ns
ns
ns
ns
ns
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