M29DW323DT70N6E STMicroelectronics, M29DW323DT70N6E Datasheet

IC, FLASH, 32MBIT, 70NS, TSOP-48

M29DW323DT70N6E

Manufacturer Part Number
M29DW323DT70N6E
Description
IC, FLASH, 32MBIT, 70NS, TSOP-48
Manufacturer
STMicroelectronics
Datasheet

Specifications of M29DW323DT70N6E

Memory Type
Flash - Boot Block
Memory Size
32Mbit
Memory Configuration
4M X 8 / 2M X 16
Ic Interface Type
Parallel
Access Time
70ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FEATURES SUMMARY
June 2003
SUPPLY VOLTAGE
– V
– V
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)
DUAL OPERATIONS
– Read in one bank while Program or Erase in
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB: 225Fh
PP
Read
other
Erase Suspend
additional information
CC
PP
/WP PIN for FAST PROGRAM and WRITE
=12V for Fast Program (optional)
= 2.7V to 3.6V for Program, Erase and
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZE)
M29DW323DB
TFBGA63 (ZA)
M29DW323DT
TSOP48 (N)
12 x 20mm
6 x 8mm
7 x 11mm
FBGA
FBGA
1/49

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M29DW323DT70N6E Summary of contents

Page 1

Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) FEATURES SUMMARY SUPPLY VOLTAGE – 2.7V to 3.6V for Program, Erase and CC Read – V =12V for Fast Program (optional) PP ACCESS TIME: 70, 90ns ...

Page 2

M29DW323DT, M29DW323DB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Quadruple Byte Program Command ...

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M29DW323DT, M29DW323DB Table 17. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data . . . . . 29 Figure 18. TFBGA63 7x11mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline . . . . 30 ...

Page 5

SUMMARY DESCRIPTION The M29DW323D Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On power-up the ...

Page 6

M29DW323DT, M29DW323DB Figure 3. TSOP Connections V PP /WP 6/49 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29DW323DT A20 M29DW323DB A18 A17 ...

Page 7

Figure 4. TFBGA63 Connections (Top view through package ( ( ( (1) NC Note: 1. Balls are shorted together via the substrate but not ...

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M29DW323DT, M29DW323DB Figure 5. TFBGA48 Connections (Top view through package Table 2. Bank Architecture Bank Bank Size A 8 Mbit B 24 Mbit 8/ ...

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Figure 6. Block Addresses (x8) Top Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 64 KByte or 32 KWord 00FFFFh Bank B 2F0000h 64 KByte or 32 KWord 2FFFFFh 300000h 64 KByte or 32 KWord 30FFFFh 3E0000h 64 KByte or ...

Page 10

M29DW323DT, M29DW323DB Figure 7. Block Addresses (x16) Top Boot Block (x16) Address lines A20-A0 000000h 64 KByte or 32 KWord 007FFFh Bank B 178000h 64 KByte or 32 KWord 17FFFFh 180000h 64 KByte or 32 KWord 187FFFh 1F0000h 64 KByte ...

Page 11

SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A20). The Address Inputs select the cells in the memory array to access dur- ...

Page 12

M29DW323DT, M29DW323DB Ready/Busy is Low Ready/Busy is high-im- OL pedance during Read mode, Auto Select mode and Erase Suspend mode. After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy be- comes high-impedance. See ...

Page 13

BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. The Dual Bank architecture of the M29DW323 al- lows read/write operations in Bank A, while ...

Page 14

M29DW323DT, M29DW323DB Table 3. Bus Operations, BYTE = V Operation E Bus Read V IL Bus Write V IL Output Disable X Standby V IH Read Manufacturer V IL Code V Read Device Code IL Extended Memory V IL Block ...

Page 15

COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will result in ...

Page 16

M29DW323DT, M29DW323DB Fast Program Commands There are two Fast Program commands available to improve the programming throughput, by writing several adjacent words or bytes in parallel. The Quadruple Byte Program command is available for x8 operations, while the Double Word ...

Page 17

Chip Erase operation ap- pears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the erase operation the memory will ignore all ...

Page 18

M29DW323DT, M29DW323DB Enter Extended Block Command The M29DW323D has an extra 64KByte block (Extended Block) that can only be accessed using the Enter Extended Block command. Three Bus write cycles are required to issue the Extended Block command. Once the ...

Page 19

Table 6. Commands, 8-bit mode, BYTE = V Command Add 1 Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Quadruple Byte Program 5 AAA Unlock Bypass 3 AAA Unlock Bypass Program 2 Unlock Bypass Reset 2 Chip Erase ...

Page 20

M29DW323DT, M29DW323DB STATUS REGISTER The M29DW323D has two Status Registers, one for each bank. The Status Registers provide infor- mation on the current or previous Program or Erase operations executed in each bank. The var- ious bits convey information and ...

Page 21

Table 8. Status Register Bits Operation Program Bank Address Program During Erase Bank Address Suspend Program Error Bank Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block Erase ...

Page 22

... PP 22/49 these or any other conditions above those indicat the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (1,2) +2V during transition and for less than 20ns during transitions. ...

Page 23

DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...

Page 24

M29DW323DT, M29DW323DB Table 12. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (2) Supply Current (Read) I CC1 I Supply Current (Standby) CC2 Supply Current (Program/ (1,2) I CC3 Erase) V Input Low Voltage ...

Page 25

Figure 12. Read Mode AC Waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 13. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...

Page 26

M29DW323DT, M29DW323DB Figure 13. Write AC Waveforms, Write Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 14. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...

Page 27

Figure 14. Write AC Waveforms, Chip Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 15. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...

Page 28

M29DW323DT, M29DW323DB Figure 15. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 16. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH ...

Page 29

PACKAGE MECHANICAL Figure 17. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline DIE Note: Drawing not to scale. Table 17. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data ...

Page 30

M29DW323DT, M29DW323DB Figure 18. TFBGA63 7x11mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline BALL "A1" A Note: Drawing not to scale. Table 18. TFBGA63 7x11mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data ...

Page 31

Figure 19. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline FD FE BALL "A1" Note: Drawing not to scale. Table 19. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data Symbol Typ ...

Page 32

M29DW323DT, M29DW323DB PART NUMBERING Table 20. Ordering Information Scheme Example: Device Type M29 Architecture D = Dual Bank Operating Voltage 2.7 to 3.6V CC Device Function 323D = 32 Mbit (x8/x16), Boot Block, 1/4-3/4 partitioning Array ...

Page 33

APPENDIX A. BLOCK ADDRESSES Table 21. Top Boot Block Addresses, M29DW323DT (Kbytes/ Block Kwords) 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 ...

Page 34

M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 64/32 49 ...

Page 35

Block Kwords) 63 8/4 64 8/4 65 8/4 66 8/4 67 8/4 68 8/4 69 8/4 70 8/4 Note: 1. Used as the Extended Block Addresses in Extended Block mode. Protection Block (x8) Group Protection Group 3F0000h–3F1FFFh Protection Group ...

Page 36

M29DW323DT, M29DW323DB Table 22. Bottom Boot Block Addresses, M29DW323DB (Kbytes/ Block Kwords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 ...

Page 37

Protection Block Block Kwords) Group 31 64/32 32 64/32 Protection Group 33 64/32 34 64/32 35 64/32 36 64/32 Protection Group 37 64/32 38 64/32 39 64/32 40 64/32 Protection Group 41 64/32 42 64/32 43 64/32 44 64/32 ...

Page 38

M29DW323DT, M29DW323DB (Kbytes/ Block Kwords) 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 Note: 1. Used as the Extended Block Addresses in Extended Block mode. 38/49 Protection Block (x8) Group 380000h-38FFFFh 390000h-39FFFFh ...

Page 39

APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical ...

Page 40

M29DW323DT, M29DW323DB Table 25. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h ...

Page 41

Table 27. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h ...

Page 42

M29DW323DT, M29DW323DB APPENDIX C. EXTENDED MEMORY BLOCK The M29DW323D has an extra block, the Extend- ed Block, that can be accessed using a dedicated command. This Extended Block is 32 KWords in x16 mode and 64 KBytes in x8 mode. ...

Page 43

APPENDIX D. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the memo- ry. The blocks are protected in groups, refer to Appendix A, Tables 21 and 22 for details of ...

Page 44

M29DW323DT, M29DW323DB Figure 20. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. 44/49 START ADDRESS = GROUP ADDRESS ...

Page 45

Figure 21. Programmer Equipment Chip Unprotect Flowchart NO = 1000 Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. START PROTECT ALL GROUPS CURRENT ...

Page 46

M29DW323DT, M29DW323DB Figure 22. In-System Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. 46/49 START WRITE 60h ADDRESS = GROUP ADDRESS ...

Page 47

Figure 23. In-System Equipment Chip Unprotect Flowchart NO = 1000 ISSUE READ/RESET COMMAND Note: Block Protection Groups are shown in Appendix D, Tables 21 and 22. START PROTECT ALL GROUPS CURRENT GROUP = ...

Page 48

M29DW323DT, M29DW323DB REVISION HISTORY Table 31. Document Revision History Date Version 20-Sep-2001 -01 First Issue (Target Specification) 26-Oct-2001 -02 Document expanded to full Product Preview 16-Jan-2002 -03 Corrections made in “Primary Algorithm-Specific Extended Query” Table in Appendix-B Description of Ready/Busy ...

Page 49

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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