M29DW323DB70N6E STMicroelectronics, M29DW323DB70N6E Datasheet - Page 24

• Manufacturer Part Number: M29DW323DB70N6E
• Description: IC, FLASH, 32MBIT, 70NS, TSOP-48
• Manufacturer: STMicroelectronics

Specifications of M29DW323DB70N6E

• Memory Type: Flash - Boot Block
• Memory Size: 32Mbit
• Memory Configuration: 4M X 8 / 2M X 16
• Ic Interface Type: Parallel
• Access Time: 70ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M29DW323DT, M29DW323DB
Table 12. DC Characteristics
Note: 1. Sampled only, not 100% tested.
24/49
I
Symbol
CC3
I
CC1
V
I
V
V
V
V
V
I
CC2
V
I
I
LKO
LO
PP
OH
PP
OL
LI
2. In Dual operations the Supply Current will be the sum of
IH
ID
IL
(1,2)
(2)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current (Program/
Erase)
Input Low Voltage
Input High Voltage
Voltage for
Acceleration
Current for
Acceleration
Output Low Voltage
Output High Voltage
Identification Voltage
Program/Erase Lockout Supply
Voltage
Parameter
V
V
PP
PP
/WP
/WP
Program
Program
Controller active
Program/Erase
V
V
0V
E = V
RP = V
Test Condition
0V
E = V
CC
CC
I
OH
I
I
CC1
OL
f = 6MHz
= 3.0V ±10%
= 3.0V ±10%
V
= –100
IL
= 1.8mA
V
(read) and
CC
OUT
, G = V
CC
IN
±0.2V,
V
±0.2V
V
PP
µ
V
V
V
CC
A
PP
IH
/WP = V
CC
IL
I
,
CC3
/WP =
or V
(program/erase).
IH
PP
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
V
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
mA
mA
mA
mA
µ
µ
µ
V
V
V
V
V
V
V
A
A
A