SST25VF040B-50-4I-S2AF SILICON STORAGE TECHNOLOGY, SST25VF040B-50-4I-S2AF Datasheet - Page 21

• Manufacturer Part Number: SST25VF040B-50-4I-S2AF
• Description: 4M FLASH MEMORY, SPI EEPROM, SOIC8
• Manufacturer: SILICON STORAGE TECHNOLOGY

Specifications of SST25VF040B-50-4I-S2AF

• Memory Size: 4Mbit
• Clock Frequency: 50MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-2010)
• Device: RoHS Compliant
• Package / Case: SOIC
• Memory Type: Flash
• Memory Configuration: 512K X 8
• Interface Type: Serial, SPI
• Rohs Compliant: Yes

4 Mbit SPI Serial Flash
SST25VF040B
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Package Power Dissipation Capability (T
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
O
TABLE 8: DC O
TABLE 9: R
©2006 Silicon Storage Technology, Inc.
Range
Commercial
Industrial
Symbol
I
I
I
I
I
I
V
V
V
V
V
Symbol
T
T
DDR
DDR2
DDW
SB
LI
LO
PERATING
PU-READ
PU-WRITE
IL
IH
OL
OL2
OH
1. Output shorted for no more than one second. No more than one output shorted at a time.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
Parameter
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
R
ANGE
ECOMMENDED
PERATING
Parameter
V
V
DD
DD
Ambient Temp
-40°C to +85°C
Min to Read Operation
Min to Write Operation
0°C to +70°C
1
C
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
YSTEM
HARACTERISTICS
P
OWER
A
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
2.7-3.6V
2.7-3.6V
-
UP
V
0.7 V
V
DD
Min
DD
T
-0.2
IMINGS
DD
Limits
Max
0.2
0.4
0.8
20
10
15
30
21
1
1
AC C
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figures 25 and 26
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
ONDITIONS OF
Test Conditions
CE#=V
CE#=V
V
V
V
V
I
I
I
CE#=0.1 V
CE#=0.1 V
OL
OL
OH
IN
OUT
DD
DD
=100 µA, V
=1.6 mA, V
=-100 µA, V
=GND to V
=V
=V
=GND to V
DD
DD
DD
DD
, V
Min
Max
DD
DD
T
IN
EST
/0.9 V
/0.9 V
=V
DD
DD
DD
Minimum
DD
DD
, V
=V
=V
DD
=V
, V
10
10
DD
DD
DD
DD
DD
or V
DD
DD
=V
@25 MHz, SO=open
@50 MHz, SO=open
Min
Min
=V
Min
SS
DD
DD
Max
Max
S71295-01-000
L
= 30 pF
Units
Data Sheet
µs
µs
DD
DD
T8.0 1295
T9.0 1295
+0.5V
+2.0V
1/06