SST25VF040B-50-4I-QAF SILICON STORAGE TECHNOLOGY, SST25VF040B-50-4I-QAF Datasheet - Page 14

• Manufacturer Part Number: SST25VF040B-50-4I-QAF
• Description: 4M FLASH MEMORY, SPI EEPROM, WSON-8
• Manufacturer: SILICON STORAGE TECHNOLOGY

Specifications of SST25VF040B-50-4I-QAF

• Memory Size: 4Mbit
• Clock Frequency: 50MHz
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: WSON
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-2010)
• Device: RoHS Compliant
• Package / Case: WSON
• Memory Type: Flash
• Memory Configuration: 512K X 8
• Interface Type: Serial, SPI
• Rohs Compliant: Yes

Data Sheet
4-KByte Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4
KByte sector to FFH. A Sector-Erase instruction applied to
a protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE# must remain active low for the duration of
any command sequence. The Sector-Erase instruction is
initiated by executing an 8-bit command, 20H, followed by
address bits [A
©2006 Silicon Storage Technology, Inc.
FIGURE 11: S
23
-A
ECTOR
0
]. Address bits [A
-E
RASE
SCK
CE#
SO
SI
S
EQUENCE
MODE 3
MODE 0
MS
-A
12
] (A
MSB
0 1 2 3 4 5 6 7 8
MS
= Most
20
HIGH IMPEDANCE
14
MSB
Significant address) are used to determine the sector
address (SA
CE# must be driven high before the instruction is executed.
The user may poll the Busy bit in the software status regis-
ter or wait T
Sector-Erase cycle. See Figure 11 for the Sector-Erase
sequence.
ADD.
15 16
ADD.
SE
X
), remaining address bits can be V
23 24
for the completion of the internal self-timed
1295 SecErase.0
ADD.
31
4 Mbit SPI Serial Flash
SST25VF040B
S71295-01-000
IL
or V
1/06
IH.