NTE2117 NTE ELECTRONICS, NTE2117 Datasheet - Page 4

• Manufacturer Part Number: NTE2117
• Description: IC, DRAM, 16KBIT, DIP-16
• Manufacturer: NTE ELECTRONICS

Specifications of NTE2117

• Memory Type: DRAM - NMOS
• Memory Configuration: 16K X 1
• Access Time: 200ns
• Page Size: 16Kbit
• Memory Case Style: DIP
• No. Of Pins: 16
• Operating Temperature Range: 0°C To +70°C
• Termination Type: Through Hole
• Filter Terminals: Through Hole

Note 7. T
Note 8. AC measurements assume t
Note 9. V
Note10. The specifications for t
Note 11. Assumes that t
Note12. Assumes that t
Note13. Measured with a load equivalent to 2 TTL loads and 100pF.
Note14. t
Note15. Operation within the t
Note16. These parameters are referenced to CAS leading edge in early write cycles and to WRITE
Note17. t
AC Electrical Characteristics: (0°C ≤ T
Note18. Effective capacitance calculated from the equation:
Note19. CAS = V
CAS to WRITE Delay
RAS to WRITE Delay
Input Capacitance (A
Input Capacitance RAS, CAS, WRITE
Output Capacitance (D
rates with reduced ambient temperatures and higher power dissipation is permissible, how-
ever, provided AC operating parameters are met.
nals. Also transition times are measured between V
time at which proper operation over the full temperature range (0°C ≤ T
shown in this table, t
referenced to output voltage levels.
fied as a reference point if t
is controlled exclusively by t
leading edge in delayed write or read−modify−write cycles.
cycles only. If t
remain open circuit (high impedance) throughout the entire cycle; If t
t
the selected cell; If neither of the above sets of conditions is satisfied the condition of the
data out (at access time) is indeterminate.
OFF
WCS
RWD
A
IHC
is specified here for operation at frequencies to t
(max) defines the time at which the output achieves the open circuit condition and is not
(min) or V
, t
≥ t
CWD
RWD
IHC
Parameter
Parameter
, and t
0
(min), the cycle is a read−write cycle and the data out will contain data read from
to disable D
− A
OUT
IH
RCD
RCD
WCS
6
(min) and V
RWD
)
), D
(max).
≤ t
IN
≥ t
RAC
RCD
are restrictive operating parameters in read write and read modify write
RCD
unless otherwise specified)
RC
WCS
OUT
(max) limit insures that t
will increase by the amount that t
(min), t
(Max). If t
RCD
(min), the cycle is an early write cycle and the data out pin will
∆V with ∆ = 3V and
power supplies at nominal levels.
CAC
.
IL
T
(max) are reference levels for measuring timing of input sig-
= 5ns.
is greater than the specified t
A
.
≤ +70°C, V
RMW
RCD
(min), and t
Symbol
Symbol Test Conditions
t
t
is greater than the maximum recommended value
CWD
RWD
C
C
C
I1
I2
O
DD
= 12V ±10%, V
Note 17
Note 17
Note 18
Note 18
Note 18, Note 19
Test Conditions
RAC
RWC
RC
(max) can be met. t
IHC
≥ t
(min) are used only to indicate cycle
RC
or V
RCD
RCD
(min). Operation at higher cycle
IH
SS
(max) limit, then access time
C =
exceeds the value shown.
and V
= 0V, −5.7V ≤ V
Min
Min
145
80
−
−
−
1∆t
∆V
IL
A
CWD
.
≤+70°C) is assured.
Typ
RCD
Typ
−
−
4
8
5
≥ t
(max) is speci-
CWD
Max
Max
10
BB
−
−
5
7
(min) and
≤ −4.5V
Unit
Unit
pF
pF
pF
ns
ns