NTE2107 NTE ELECTRONICS, NTE2107 Datasheet - Page 4

• Manufacturer Part Number: NTE2107
• Description: IC, DRAM, 4KBIT, DIP-16
• Manufacturer: NTE ELECTRONICS

Specifications of NTE2107

• Memory Type: DRAM - NMOS
• Memory Configuration: 4K X 1
• Access Time: 200ns
• Page Size: 4Kbit
• Memory Case Style: DIP
• No. Of Pins: 16
• Operating Temperature Range: 0°C To +70°C
• Mounting Type: Through Hole

11
12
V
V
V
Memory Inverts From Data In to Data Out
WE (12)
CE (17)
A10 (3)
A8 (21)
A7 (20)
A6 (19)
A5 (15)
A4 (14)
A3 (13)
A2 (10)
DD
V
A11 (4)
SS
CC
CS (5)
A9 (2)
A1 (9)
A0 (8)
.035 (0.89)
BB
(18)
(22)
(11)
(1)
1.106 (28.0) Max
.051 (1.3)
1.067 (27.1)
.100 (2.54)
Latch
CS
+12V
0V
−5V
+5V
Control
Timing
&
6
6
.199 (5.0) Max
Block Diagram
6
13
1
.100 (2.54)
Column Decoder (1:64)
Sense Amplifiers (64)
4096 Bits
Memory
Array
6
.389 (9.9)
Max
15°
D
(6)
(11.3)
Control
.455
IN
Buffer
R/W
I/O
D
(7)
OUT