NBB-500-T1 RFMD, NBB-500-T1 Datasheet - Page 2

• Manufacturer Part Number: NBB-500-T1
• Description: IC AMP MMIC GAAS 4GHZ 4-MICROX
• Manufacturer: RFMD

Specifications of NBB-500-T1

• Current - Supply: 25mA ~ 45mA
• Frequency: 0Hz ~ 4GHz
• Gain: 19dB
• Noise Figure: 3.2dB @ 3GHz
• P1db: 12.3dBm
• Package / Case: 4-Micro-X
• Rf Type: LMDS, VSAT, WLAN, UNII, DWDM, PTP PMP
• Test Frequency: 2GHz
• Voltage - Supply: 3.6 V ~ 4.2 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NBB-500TR13; NBB-500TR13

NBB-500
2 of 12
Absolute Maximum Ratings
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent
damage.
Overall
Small Signal Power Gain, S21
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
Gain Temperature Coefficient,
MTTF versus Temperature
@ I
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
CC
-1dB Compression, P1dB
δG
=35mA
T
/δT
Parameter
Parameter
D
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support, contact RFMD at ([phone] or [e-mail].
Min.
19.0
16.0
3.6
-65 to +150
-45 to +85
Rating
Specification
+20
300
200
70
>1,000,000
-0.0015
1.70:1
1.45:1
1.65:1
+26.5
Typ.
20.5
18.5
12.3
-17.0
19.5
±0.8
14.0
120
256
4.2
3.2
3.9
85
Max.
Unit
dBm
mW
4.2
mA
°C
°C
°C
dB/°C
hours
°C/W
Unit
dBm
dBm
dBm
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
GHz
dB
dB
dB
dB
dB
dB
°C
°C
V
V
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
BW3 (3dB)
f=2.0GHz
f=6.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 10.0GHz
f=0.1GHz to 3.0GHz
J
-------------------------- -
D
T
Caution! ESD sensitive device.
V
=+3.9V, I
–
D
T
⋅
CASE
I
CC
CC
=35mA, Z
=
Condition
θ
JC
(
0
°C Watt
=50Ω, T
Rev A9 DS070327
⁄
A
=+25°C
)