NBB-500-D RFMD [RF Micro Devices], NBB-500-D Datasheet
NBB-500-D
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NBB-500-D Summary of contents
Page 1
... NBB-500 provides flexibility and stability. The NBB-500 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high- volume tape-and-reel requirements available in either packaged or chip (NBB-500-D) form, where its gold metallization is ideal for hybrid circuit designs. Optimum Technology Matching® Applied Si BJT ...
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... NBB-500 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Exceeding any one or a combination of these limits may cause permanent damage. Parameter Min. Overall Small Signal Power Gain, S21 19.0 16.0 Gain Flatness, GF Input and Output VSWR ...
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... Because DC is present on this pin blocking capacitor, suit- able for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. 4 GND Same as pin 2. Rev A5 050414 . The resistor is selected to set the – DEVICE ------------------------------------------ - NBB-500 Interface Schematic RF OUT RF IN 4-51 ...
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... NBB-500 Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. In Recommended Bias Resistor Values Supply Voltage Bias Resistor, R (Ω 4-52 Typical Bias Configuration block 117 174 231 choke (optional) ...
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... Chip Outline Drawing - NBB-500-D UNITS: Inches (mm) Sales Criteria - Unpackaged Die Die Sales Information • All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego- tiated on a case-by-case basis. • Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product Final Visual Inspection Criteria • ...
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... NBB-500 Die Attach • The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the thermal path by which heat can leave the chip. ...
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... Extended Frequency InGaP Amplifier Designer’s Tool Kit This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. • 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers • ...
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... NBB-500 FLANGE HUB All dimensions in mm 0.30 ± 0.05 R0.3 MAX. SECTION A-A NOTES sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 100 mm. 3. Material: PS and Bo measured on a plane 0.3 mm above the bottom of the pocket measured from a plane on the inside bottom of the pocket to the surface of the carrier. ...
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... Amplifier Current /Gain versus P OUT 25.0 20.0 15.0 10.0 5.0 0.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 P (dBm) IN Third Order Intercept versus Frequency at 25°C 30.0 25.0 20.0 15.0 10.0 5.0 0.0 1.0 2.0 3.0 Frequency (GHz) Rev A5 050414 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 40.00 45.00 50.00 1.0 (mA GHz IN 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 Pout (dBm) 2.0 Gain (dB) 0.0 -2.0 0.0 2.0 4.0 -14.0 4.0 5.0 6.0 NBB-500 P1dB versus Frequency at 25°C 2.0 3.0 4.0 5.0 Frequency (GHz) P /Gain versus GHz OUT IN Pout (dBm) Gain (dB) -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 P (dBm) IN 6.0 0.0 2.0 4-57 ...
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... NBB-500 Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S11 versus Frequency, Over Temperature ...