SI3812DV-T1-GE3 Vishay, SI3812DV-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI3812DV-T1-GE3
• Description: MOSFET Small Signal 20V 2.4A 1.15W 125mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SI3812DV-T1-GE3

• Transistor Polarity: N Channel + Schottky Diode
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4.5
3.6
2.7
1.8
0.9
0.0
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.0
0
0
V
I
D
V
DS
1
On-Resistance vs. Drain Current
GS
= 2.4 A
0.5
= 10 V
1
V
= 2.5 V
DS
Q
Output Characteristics
g
2
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
1.0
V
2
GS
3
= 4.5 V thru 3.5 V
3 V
2.5 V
4
1.5
3
2 V
1.5 V
This document is subject to change without notice.
V
5
GS
2.0
= 4.5 V
4
6
2.5
5
7
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
10
0
8
6
4
2
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
GS
= 2.4 A
= 4.5 V
4
V
V
1.0
DS
GS
0
T
Transfer Characteristics
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.5
25
Capacitance
8
C
2.0
C
C
50
Vishay Siliconix
T
25 °C
oss
iss
rss
C
www.vishay.com/doc?91000
= - 55 °C
12
2.5
75
Si3812DV
www.vishay.com
100
3.0
16
125 °C
125
3.5
150
4.0
20
3