CY7C1520KV18-200BZC Cypress Semiconductor Corp, CY7C1520KV18-200BZC Datasheet - Page 21

• Manufacturer Part Number: CY7C1520KV18-200BZC
• Description: IC SRAM 72MBIT 200MHZ 165-FPBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1520KV18-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with power applied . –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC applied to outputs in High-Z ........ –0.5 V to V
DC input voltage
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage (MIL-STD-883, M 3015).... >2001 V
Latch up current ..................................................... >200 mA
Operating Range
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-00437 Rev. *J
V
V
V
V
V
V
V
V
I
I
V
15. Power up: assumes a linear ramp from 0 V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
Commercial
Industrial
X
OZ
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
Range
REF
(min) = 0.68 V or 0.46 V
Power supply voltage
IO supply voltage
Output HIGH voltage
Output LOW voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
Input reference voltage
[11]
Temperature (T
–40°C to +85°C
DD
DDQ
............................. –0.5 V to V
0°C to +70°C
Description
Ambient
relative to GND........–0.5 V to +2.9 V
relative to GND........–0.5 V to +V
DDQ
[12]
, whichever is larger, V
OH
OL
= (V
= –(V
A
)
DDQ
[18]
DDQ
1.8 ± 0.1 V
/2)/(RQ/5) for values of 175 Ω < RQ < 350 Ω.
DD
V
/2)/(RQ/5) for values of 175 Ω < RQ < 350 Ω.
(min) within 200 ms. During this time V
DD
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical value = 0.75 V
OH
OL
[15]
REF
= 0.1 mA, Nominal impedance
= −0.1 mA, Nominal impedance
DDQ
DD
(max) = 0.95 V or 0.54 V
I
I
V
+ 0.3 V
+ 0.3 V
1.4 V to
≤ V
≤ V
DDQ
V
Test Conditions
DD
DDQ
DDQ,
DD
[15]
Output disabled
Neutron Soft Error Immunity
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
cation Note AN 54908 “Accelerated Neutron SER Testing and Calculation of
Terrestrial Failure Rates”
DDQ
Parameter
LMBU
LSBU
, whichever is smaller.
SEL
IH
< V
CY7C1516KV18, CY7C1527KV18
CY7C1518KV18, CY7C1520KV18
DD
2
, 95% confidence limit calculation. For more details refer to Appli-
and V
Description
Single event
DDQ
single-bit
multi-bit
latch up
Logical
Logical
upsets
upsets
V
V
< V
DDQ
DDQ
V
V
DDQ
REF
DD
–0.3
0.68
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
.
−5
−5
SS
+ 0.1
– 0.2
Conditions
25 °C
25 °C
85 °C
Test
0.75
Typ
1.8
1.5
V
V
DDQ
DDQ
V
V
Typ Max* Unit
197
DDQ
REF
0
0
V
Max
0.95
V
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 21 of 33
0.01
216
0.1
Unit
FIT/
FIT/
FIT/
Dev
Mb
Mb
μA
μA
V
V
V
V
V
V
V
V
V
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