CY7C1520KV18-200BZC Cypress Semiconductor Corp, CY7C1520KV18-200BZC Datasheet

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CY7C1520KV18-200BZC

Manufacturer Part Number
CY7C1520KV18-200BZC
Description
IC SRAM 72MBIT 200MHZ 165-FPBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1520KV18-200BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
72M (2M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1520KV18-200BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Features
Configurations
CY7C1516KV18 – 8M x 8
CY7C1527KV18 – 8M x 9
CY7C1518KV18 – 4M x 18
CY7C1520KV18 – 2M x 36
Selection Guide
Cypress Semiconductor Corporation
Document Number: 001-00437 Rev. *J
Maximum Operating Frequency
Maximum Operating Current
(13 x 15 x 1.4 mm)
72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
333 MHz clock for high bandwidth
Two-word burst for reducing address bus frequency
Double data rate (DDR) interfaces
(data transferred at 666 MHz) at 333 MHz
Two input clocks (K and K) for precise DDR timing
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
Synchronous internally self-timed writes
DDR II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
Operates similar to DDR I device with 1 cycle read latency when
DOFF is asserted LOW
1.8 V core power supply with HSTL inputs and outputs
Variable drive HSTL output buffers
Expanded HSTL output voltage (1.4 V–V
Available in 165-ball fine pitch ball grid array (FBGA) package
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible Test Access Port
Phase-locked loop (PLL) for accurate data placement
SRAM uses rising edges only
Supports both 1.5 V and 1.8 V IO supply
Description
x18
x36
x8
x9
DD
333 MHz
)
333
510
510
520
640
198 Champion Court
300 MHz
300
480
480
490
600
Functional Description
The CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and
CY7C1520KV18 are 1.8 V synchronous pipelined SRAM
equipped with DDR II architecture. The DDR II consists of an
SRAM core with advanced synchronous peripheral circuitry and
a 1-bit burst counter. Addresses for read and write are latched
on alternate rising edges of the input (K) clock. Write data is
registered on the rising edges of both K and K. Read data is
driven on the rising edges of C and C if provided, or on the rising
edge of K and K if C/C are not provided. Each address location
is associated with two 8-bit words in the case of CY7C1516KV18
and two 9-bit words in the case of CY7C1527KV18 that burst
sequentially into or out of the device. The burst counter always
starts with a “0” internally in the case of CY7C1516KV18 and
CY7C1527KV18. On CY7C1518KV18 and CY7C1520KV18, the
burst counter takes in the least significant bit of the external
address and bursts two 18-bit words in the case of
CY7C1518KV18 and two 36-bit words in the case of
CY7C1520KV18 sequentially into or out of the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs D) are tightly matched to the two
output echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
design. Output data clocks (C/C) enable maximum system
clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
72-Mbit DDR II SRAM 2-Word
CY7C1516KV18, CY7C1527KV18
CY7C1518KV18, CY7C1520KV18
250 MHz
250
420
420
430
530
San Jose
,
CA 95134-1709
200 MHz
200
370
370
380
450
Burst Architecture
167 MHz
Revised April 10, 2011
167
340
340
340
400
408-943-2600
MHz
Unit
mA
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Related parts for CY7C1520KV18-200BZC

CY7C1520KV18-200BZC Summary of contents

Page 1

... CY7C1518KV18 and two 36-bit words in the case of CY7C1520KV18 sequentially into or out of the device. Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs (Q, sharing the same ...

Page 2

... Logic Block Diagram (CY7C1527KV18 (21:0) Address Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [0] Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Write Write Reg Reg Output Logic Control Read Data Reg Reg. Reg. 8 Reg. Write Write Reg Reg Output Logic Control Read Data Reg ...

Page 3

... Logic Block Diagram (CY7C1518KV18) Burst A0 Logic (21:0) A Address (21:1) Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [1:0] Logic Block Diagram (CY7C1520KV18) Burst A0 Logic (20:0) A Address (20:1) Register LD K CLK K Gen. DOFF V REF Control R/W Logic BWS [3:0] Document Number: 001-00437 Rev. *J ...

Page 4

... Depth Expansion ......................................................... 9 Programmable Impedance ........................................ 10 Echo Clocks .............................................................. 10 PLL ............................................................................ 10 Application Example ...................................................... 10 Truth Table ...................................................................... 11 Burst Address Table (CY7C1518KV18, CY7C1520KV18) ................................ 11 Write Cycle Descriptions ............................................... 11 Write Cycle Descriptions ............................................... 12 Write Cycle Descriptions ............................................... 12 IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 13 Disabling the JTAG Feature ...................................... 13 Test Access Port—Test Clock................................... 13 Test Mode Select (TMS) ........................................... 13 Test Data-In (TDI) ...

Page 5

... Pin Configuration The pin configurations for CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow DQ4 DQ5 H DOFF V V REF DDQ DQ6 DQ7 R TDO TCK DQ4 DQ5 H DOFF V V REF DDQ DQ6 DQ7 R TDO TCK A Note 1. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level. ...

Page 6

... Pin Configuration (continued) The pin configurations for CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 follow DQ9 DQ10 DQ11 F NC DQ12 DQ13 H DOFF V V REF DDQ DQ14 L NC DQ15 DQ16 DQ17 R TDO TCK NC/144M DQ27 DQ18 DQ28 D NC DQ29 DQ19 DQ20 F NC DQ30 DQ21 ...

Page 7

... CY7C1518KV18 – the input to the burst counter. These are incremented in a linear fashion internally. 22 address inputs are needed to access the entire memory array. CY7C1520KV18 – the input to the burst counter. These are incremented in a linear fashion internally. 21 address inputs are needed to access the entire memory array. All the address inputs are ignored when the appropriate port is deselected ...

Page 8

... Ground for the device Power Supply Power supply inputs for the outputs of the device. DDQ Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Pin Description output impedance are set to 0.2 x RQ, where resistor connected [x:0] , which enables the DDQ Page [+] Feedback ...

Page 9

... Functional Overview The CY7C1516KV18, CY7C1527KV18, CY7C1518KV18, and CY7C1520KV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface, which operates with a read latency of one and a half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to V behaves in DDR-I mode with a read latency of one clock cycle. ...

Page 10

... Echo Clock1/Echo Clock#1 Echo Clock2/Echo Clock#2 Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 PLL These chips use a PLL that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the PLL is locked after 20 μ ...

Page 11

... Device powers up deselected with the outputs in a tristate condition CY7C1518KV18 and CY7C1520KV18, “A1” represents address location latched by the devices when transaction was initiated and “A2” represents the addresses sequence in the burst. On CY7C1516KV18 and CY7C1527KV18, “A1” represents A + ‘0’ and “A2” represents A + ‘1’. ...

Page 12

... L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into the device during this portion of a write operation. Write Cycle Descriptions The write cycle description table for CY7C1520KV18 follows. BWS BWS BWS BWS ...

Page 13

... TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Instruction Register Three-bit instructions are serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in page 16 ...

Page 14

... TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. ...

Page 15

... The state diagram for the TAP controller follows. TEST-LOGIC 1 RESET 0 1 TEST-LOGIC/ 0 IDLE Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 [9] 1 SELECT DR-SCAN 0 1 CAPTURE- SHIFT- ...

Page 16

... These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the 11. Overshoot: V (AC) < 0. (Pulse width less than t IH DDQ 12. All voltage referenced to Ground. Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 0 Bypass Register Instruction Register ...

Page 17

... CS CH 14. Test conditions are specified using the load in TAP AC Test Conditions. t Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Description [14] Figure 2. TAP Timing and Test Conditions 0 Ω ...

Page 18

... Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Value CY7C1527KV18 CY7C1518KV18 000 000 00000110100 00000110100 ...

Page 19

... Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Bump ID Bit # Bump ID 10G 11F 58 5A 11G 10F 61 4B 11E 62 3A 10E 63 2A 10D 10C 66 3B 11D ...

Page 20

... DDQ DOFF Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 PLL Constraints PLL uses K clock as its synchronizing input. The input must ■ have low phase jitter, which is specified as t The PLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the PLL is enabled, then the ■ ...

Page 21

... RQ < 350 Ω. 17. Outputs are impedance controlled DDQ 18. V (min whichever is larger, V REF DDQ Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Neutron Soft Error Immunity Parameter LSBU LMBU DD + 0.3 V DDQ SEL + 0 LMBU or SEL events occurred during testing; this column represents a 2 statistical χ ...

Page 22

... DC Electrical Characteristics [12] Over the Operating Range Parameter Description [19 operating supply DD DD Note 19. The operation current is calculated with 50% read cycle and 50% write cycle. Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Test Conditions V = Max, 333 MHz (x8 mA, OUT (x9 1/t MAX CYC (x18) ...

Page 23

... Description I Automatic power down SB1 current AC Electrical Characteristics [11] Over the Operating Range Parameter Description V Input HIGH voltage IH V Input LOW voltage IL Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Test Conditions Max V , 333 MHz (x8) DD Both Ports Deselected, (x9) ≥ V ≤ 1/t ...

Page 24

... Note 20. Unless otherwise noted, test conditions assume signal transition time of 2 V/ns, timing reference levels of 0. levels of 0. 1.25 V, and output loading of the specified I Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Test Conditions T = 25° MHz 1 Test Conditions ...

Page 25

... When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is operated and outputs data with the output timings of that frequency range. 22. This part has an internal voltage regulator; t POWER Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 333 MHz 300 MHz Min Max Min Max Min Max Min Max Min Max [22] 1 – ...

Page 26

... CHZ CLZ 25. At any voltage and temperature t is less than t CHZ Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 333 MHz 300 MHz Min Max Min Max Min Max Min Max Min Max – 0.45 – 0.45 – ...

Page 27

... Outputs are disabled (High-Z) one clock cycle after a NOP. 28. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 [26, 27, 28] NOP NOP ...

Page 28

... CY7C1520KV18-300BZXI 250 CY7C1518KV18-250BZC CY7C1520KV18-250BZC CY7C1518KV18-250BZXC CY7C1520KV18-250BZXC CY7C1518KV18-250BZI CY7C1520KV18-250BZI CY7C1518KV18-250BZXI CY7C1520KV18-250BZXI 200 CY7C1520KV18-200BZC Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 www.cypress.com Package Diagram Package Type 51-85180 165-ball FBGA ( 1.4 mm) 51-85180 165-ball FBGA ( 1.4 mm) Pb-Free 51-85180 165-ball FBGA ( 1.4 mm) 51-85180 165-ball FBGA ( 1.4 mm) Pb-Free 51-85180 165-ball FBGA ( ...

Page 29

... Ordering Code Definition CY 7C 15XX K V18 - XXX XXX X Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Temperature Range Commercial Industrial Package Type: XXX = BZ or BZX BZ = 165-ball FBGA BZX = 165-ball FBGA (Pb-free) Frequency range: 333 MHz or 300 MHz or 250 MHz or 200 MHz V18 = 1.8 V ...

Page 30

... Package Diagram Figure 6. 165-Ball FBGA ( 1.4 mm), 51-85180 TOP VIEW PIN 1 CORNER 13.00±0.10 SEATING PLANE C Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 0.15(4X) BOTTOM VIEW PIN 1 CORNER Ø0. Ø0. Ø0.50 -0.06 (165X) +0. 1.00 5.00 10.00 13.00±0.10 NOTES : SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) PACKAGE WEIGHT : 0 ...

Page 31

... TAP test access port TCK test clock TMS test mode select TDI test data-in TDO test data-out Document Number: 001-00437 Rev. *J CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 Document Conventions Units of Measure Symbol Unit of Measure ns nano seconds V Volts µA micro Amperes µs micro seconds ...

Page 32

... Document History Page Document Title: CY7C1516KV18/CY7C1527KV18/CY7C1518KV18/CY7C1520KV18, 72-Mbit DDR II SRAM 2-Word Burst Architecture Document Number: 001-00437 Orig. of Submission Rev. ECN No. Change Date ** 374703 SYT See ECN *A 1103864 VKN See ECN *B 1699246 VKN/AESA See ECN *C 1939726 VKN/AESA See ECN *D 2606839 VKN/PYRS 11/13/08 *E 2681899 VKN/PYRS ...

Page 33

... QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders. CY7C1516KV18, CY7C1527KV18 CY7C1518KV18, CY7C1520KV18 cypress.com/go/plc Revised April 10, 2011 PSoC Solutions psoc ...

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