PC28F256J3F95A NUMONYX, PC28F256J3F95A Datasheet - Page 44

• Manufacturer Part Number: PC28F256J3F95A
• Description: IC FLASH 256MBIT 95NS 64EZBGA
• Manufacturer: NUMONYX
• Series: StrataFlash™r

Specifications of PC28F256J3F95A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (32M x8, 16M x16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 95ns
• Interface Type: Parallel
• Address Bus: 25/24Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 32M/16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 898244; 898244; PC28F256J3F95 898244

Figure 12: Single Word Asynchronous Read Waveform
Notes:
1.
2.
Figure 13: 4-Word Asynchronous Page Mode Read Waveform
Note:
1.
2.
Datasheet
44
Address [A]
A[MAX:3] [A]
Data [D/Q]
BYTE#[F]
WE# [W]
D[15:0] [Q]
OE# [G]
RP# [P]
CEx [E]
A[2:1] [A]
WE# [W]
OE# [G]
RP# [P]
CEx [E]
CE
CE0, CE1, or CE2 that disables the device.
When reading the flash array a faster t
query reads, or device identifier reads).
CE
CE0, CE1, or CE2 that disables the device.
In this diagram, BYTE# is asserted high.
X
X
low is defined as the falling edge of CE0, CE1, or CE2 that enables the device. CE
low is defined as the falling edge of CE0, CE1, or CE2 that enables the device. CE
R6
R11
R7
R6
R5
R7
R5
R2
R3
R2
R16
R3
R4
R4
R12
00
GLQV
(R16) applies. For non-array reads, R4 applies (i.e., Status Register reads,
1
R1
R1
R10
Numonyx™ StrataFlash
R1
R1
R15
R13
01
2
10
X
X
3
®
high is defined as the rising edge of
high is defined as the rising edge of
Embedded Memory (J3-65nm)
11
R10
R8
4
R9
December 2008
R10
R9
R8
319942-02