PC28F256J3F95A NUMONYX, PC28F256J3F95A Datasheet - Page 40

• Manufacturer Part Number: PC28F256J3F95A
• Description: IC FLASH 256MBIT 95NS 64EZBGA
• Manufacturer: NUMONYX
• Series: StrataFlash™r

Specifications of PC28F256J3F95A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (32M x8, 16M x16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 95ns
• Interface Type: Parallel
• Address Bus: 25/24Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 32M/16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 898244; 898244; PC28F256J3F95 898244

14.2
Table 20: DC Voltage Characteristics
14.3
Table 21: Capacitance
Datasheet
40
Notes:
1.
2.
3.
4.
5.
6.
Notes:
1.
2.
3.
Symbol
Symbol
V
V
V
C
V
C
V
PENLK
V
V
LKOQ
V
PENH
OUT
LKO
IN
OH
OL
IH
IL
Includes STS.
Sampled, not 100% tested.
Block erases, programming, and lock-bit configurations are inhibited when V
range between V
Block erases, programming, and lock-bit configurations are inhibited when V
range between V
Includes all operational modes of the device including standby and power-up sequences
Input/Output signals can undershoot to -1.0V referenced to V
or less, the V
Capacitance values are for a single die.
Sampled, not 100% tested.
Silicon die capacitance only, add 1 pF for discrete packages.
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Operations
V
Operations
V
V
Output Capacitance
PEN
PEN
CC
CCQ
Input Capacitance
Lockout Voltage
Parameter
DC Voltage Specifications
Lockout during Program, Erase and Lock-Bit
during Block Erase, Program, or Lock-Bit
Capacitance
Lockout Voltage
CCQ
PENLK
LKO
valid range is referenced to V
(min) and V
(max) and V
Parameter
CE#, WE#, OE#,
Address, Data,
BYTE#,RP#
Data, STS
Signals
CC
PENH
(min), and above V
(min), and above V
SS
Min
.
2
2
CC
Typ
(max).
6
4
V
0.85 ×
Numonyx™ StrataFlash
V
–0.5
Min
PENH
CCQ
2.0
0.2
2.7
1.5
0.9
CCQ
—
—
—
SS
–
(max).
Max
and can overshoot to V
2.7 - 3.6 V
7
5
V
Max
CCQ
0.5V
0.6
0.4
0.2
2.2
3.6
—
—
—
—
Unit
pF
pF
+
PEN
CC
< V
≤ V
Unit
V
V
V
V
V
V
V
V
V
V
LKO
PENLK
®
VCCQ = (0 V - 3.6 V),
VCC = (0 V - 3.6 V),
, and not guaranteed in the
Max temp = 85 °C,
Embedded Memory (J3-65nm)
Typ temp = 25 °C,
Discrete silicon die
CCQ
, and not guaranteed in the
V
V
I
V
V
I
V
V
I
V
V
I
OL
OL
OH
OH
Test Conditions
CC
CCQ
CC
CCQ
CC
CCQ
CC
CCQ
Condition
+ 1.0V for duration of 2ns
= 2 mA
= 100 µA
= –2.5 mA
= –100 µA
= V
= V
= V
= V
= V
= V
= V
= V
CC
CC
CCMIN
CCMIN
CCQ
CCQ
CCQ
CCQ
Min
Min
Min
Min
Min
Min
December 2008
319942-02
Notes
2, 5, 6
2, 5, 6
1, 2
1, 2
2, 3
Note
1,2,3
3
4