MR25H10CDC EverSpin Technologies Inc, MR25H10CDC Datasheet - Page 7

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MR25H10CDC

Manufacturer Part Number
MR25H10CDC
Description
IC MRAM 1MBIT 40MHZ 8DFN
Manufacturer
EverSpin Technologies Inc
Datasheet

Specifications of MR25H10CDC

Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Memory Size
1M (128K x 8)
Speed
40MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
819-1014

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MR25H10CDC
Manufacturer:
NXP
Quantity:
30 000
Everspin Technologies © 2009
The WRSR command is entered by driving CS low, sending the command code and status register write data
byte, and then driving CS high.
SPI COMMUNICATIONS PROTOCOL
SCK
Read Data Bytes (READ)
CS
SO
The Read Data Bytes (READ) command allows data bytes to be read starting at an address specified by the
24-bit address. Only address bits 0-16 are decoded by the memory. The data bytes are read out sequen-
tially from memory until the read operation is terminated by bringing CS high The entire memory can be
read in a single command. The address counter will roll over to 0000h when the address reaches the top of
memory.
The READ command is entered by driving CS low and sending the command code. The memory drives the
read data bytes on the SO pin. Reads continue as long as the memory is clocked. The command is termi-
nated by bring CS high.
SI
0
0
0
1
0
SCK
CS
SO
2
SI
Instruction (03h)
0
3
0
4
0
0
0
5
High Impedance
0
1
1
6
0
2
1
7
Instruction (01h)
0
MSB
3
X
8
0
4
X
Figure 2.4 WRSR
9
Figure 2.5 READ
0
5
X
10
High Impedance
24-Bit Address
0
6
7
1
7
3
28
MSB
7
8
2
29
6
Document Number: MR25H10 Rev. 5, 5/2010
9
1
30
5
10
Status Register In
0
31
4
11
MSB
7
32
3
12
6
32
2
13
5
32
1
14
Data Out 1
4
32
0
15
3
32
Mode 3
Mode 0
MR25H10
2
32
1
32
0
32
7
Data Out 2

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