MR25H10CDC EverSpin Technologies Inc, MR25H10CDC Datasheet - Page 12

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MR25H10CDC

Manufacturer Part Number
MR25H10CDC
Description
IC MRAM 1MBIT 40MHZ 8DFN
Manufacturer
EverSpin Technologies Inc
Datasheet

Specifications of MR25H10CDC

Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Memory Size
1M (128K x 8)
Speed
40MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
819-1014

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MR25H10CDC
Manufacturer:
NXP
Quantity:
30 000
1
Everspin Technologies © 2009
4. TIMING SPECIFICATIONS
Parameter
Control input capacitance
Input/Output capacitance
Parameter
Logic input timing measurement reference level
Logic output timing measurement reference level
Logic input pulse levels
Input rise/fall time
Output load for low and high impedance parameters
Output load for all other timing parameters
ƒ = 1.0 MHz, dV = 3.0 V, T
Figure 4.1 Output Load for Impedance Parameter Measurements
Figure 4.2 Output Load for all Other Parameter Measurements
A
= 25 °C, periodically sampled rather than 100% tested.
Output
Output
Table 4.2 AC Measurement Conditions
435
Table 4.1 Capacitance
Z
D
= 50
12
3.3 V
Symbol
C
C
In
I/O
Document Number: MR25H10 Rev. 5, 5/2010
590
1
30 pF
V
L
= 1.5 V
R
Typical
-
-
Value
1.5
1.5
0 or 3.0
2
See Figure 4.1
See Figure 4.2
L
= 50
Max
6
8
MR25H10
Unit
V
V
V
ns
Unit
pF
pF

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