STM8S207S6T6CTR STMicroelectronics, STM8S207S6T6CTR Datasheet - Page 66

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STM8S207S6T6CTR

Manufacturer Part Number
STM8S207S6T6CTR
Description
IC MCU 8BIT 32KB FLASH 44LQFP
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S207S6T6CTR

Featured Product
STM32 Cortex-M3 Companion Products
Core Processor
STM8
Core Size
8-Bit
Speed
24MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 9x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Core
STM8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Electrical characteristics
10.3.3
66/105
External clock sources and timing characteristics
HSE user external clock
Subject to general operating conditions for V
Table 31.
1. Data based on characterization results, not tested in production.
Figure 16. HSE external clock source
HSE crystal/ceramic resonator oscillator
The HSE clock can be supplied with a 1 to 24 MHz crystal/ceramic resonator oscillator. All
the information given in this paragraph is based on characterization results with specified
typical external components. In the application, the resonator and the load capacitors have
to be placed as close as possible to the oscillator pins in order to minimize output distortion
and start-up stabilization time. Refer to the crystal resonator manufacturer for more details
(frequency, package, accuracy...).
I
V
LEAK_HSE
V
Symbol
f
HSE_ext
HSEH
HSEL
(1)
(1)
V
V
HSEH
HSEL
User external clock source
frequency
OSCIN input pin high level
voltage
OSCIN input pin low level
voltage
OSCIN input leakage
current
HSE user external clock characteristics
External clock
source
Parameter
OSCIN
Doc ID 14733 Rev 11
V
SS
Conditions
< V
DD
IN
< V
and T
DD
A
.
0.7 x V
Min
V
-1
0
SS
f
DD
HSE
STM8S207xx, STM8S208xx
STM8
Typ
V
0.3 x V
DD
Max
24
+ 0.3 V
1
DD
MHz
Unit
µA
V

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