ACT102H-600D,118 NXP Semiconductors, ACT102H-600D,118 Datasheet - Page 6

• Manufacturer Part Number: ACT102H-600D,118
• Description: IC AC THYRIST PWR SWITCH 8SO
• Manufacturer: NXP Semiconductors

Specifications of ACT102H-600D,118

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Current - On State (it (rms)) (max): 200mA
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 20mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 8.8A
• Voltage - Gate Trigger (vgt) (max): 900mV
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• On-state Rms Current (it Rms): 0.2 A
• Gate Trigger Voltage (vgt): 0.15 V to 0.9 V
• Gate Trigger Current (igt): 0.5 mA to 5 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064554118

NXP Semiconductors
6. Characteristics
Table 6.
ACT102H-600D
Product data sheet
Symbol
I
I
I
V
V
I
dV
dI
V
GT
L
H
D
Fig 7.
T
GT
CL
com
I
D
GT(25 C)
/dt
I
GT
/dt
2
1
3
0
junction temperature
(1) LD+ G-
(2) LD- G-
Normalized gate trigger current as a function of
50
(1)
(2)
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
clamping voltage
0
50
100
Conditions
V
T
V
T
V
see
V
I
V
V
V
V
V
circuit; exponential waveform;
see
V
dV
see
I
see
All information provided in this document is subject to legal disclaimers.
T
CL
003aac809
T
j
j
D
D
D
D
D
D
D
D
DM
D
j
= 0.3 A; see
= 25 °C; see
= 25 °C; see
com
( C)
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 12 V; I
= 600 V; T
= 600 V; T
= 400 V; T
= 100 µA; t
Figure 8
Figure 11
Figure
Figure 14
(2)
(1)
= 402 V; T
/dt = 15 V/µs; gate open circuit;
150
Rev. 1 — 23 December 2010
12; see
T
T
G
T
T
j
= 100 mA; LD+ G-;
= 100 mA; LD- G-;
= 100 mA; T
= 100 mA; T
= 25 °C; see
= 12 mA; T
j
j
j
p
≤ 125 °C
≤ 25 °C
= 125 °C; I
Figure 10
j
Figure 7
Figure 7
= 1 ms; T
= 125 °C; gate open
Figure 13
Fig 8.
I
L(25 C)
j
T(RMS)
j
= 25 °C;
j
j
I
≤ 125 °C;
L
Figure 9
= 25 °C
≤ 125 °C
3
2
1
0
junction temperature
Normalized latching current as a function of
50
= 1 A;
0
ACT102H-600D
Min
0.5
0.5
-
-
-
-
0.15
-
-
300
0.15
650
50
AC Thyristor power switch
Typ
-
-
-
-
-
-
-
-
-
-
-
-
100
© NXP B.V. 2010. All rights reserved.
T
003aac811
j
( C)
Max
5
5
25
20
1.2
0.9
-
0.2
2
-
-
-
150
Unit
mA
mA
mA
mA
V
V
V
mA
µA
V/µs
A/ms
V
6 of 14