NSS40300DDR2G ON Semiconductor, NSS40300DDR2G Datasheet - Page 5

• Manufacturer Part Number: NSS40300DDR2G
• Description: TRANS PNP DUAL 40V 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NSS40300DDR2G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 170mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 1A, 2V
• Power - Max: 653mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

350
300
250
200
150
100
0
1
V
EB
Figure 7. Input Capacitance
, EMITTER BASE VOLTAGE (V)
2
C
ibo
0.001
3
(pF)
0.01
1.0
0.1
10
0.01
Single Pulse Test at T
4
TYPICAL CHARACTERISTICS
Figure 9. Safe Operating Area
5
0.1
http://onsemi.com
6
A
V
= 25°C
CE
5
1.0
(V
1 s
Thermal Limit
dc
100
90
80
70
60
50
40
30
)
0
10
5
V
cb
C
Figure 8. Output Capacitance
, COLLECTOR BASE VOLTAGE (V)
obo
100 ms
10
10 ms
1 ms
(pF)
100
15
20
25
30
35
40