NSS40300DDR2G ON Semiconductor, NSS40300DDR2G Datasheet

TRANS PNP DUAL 40V 8-SOIC

NSS40300DDR2G

Manufacturer Part Number
NSS40300DDR2G
Description
TRANS PNP DUAL 40V 8-SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSS40300DDR2G

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
170mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 1A, 2V
Power - Max
653mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NSS40300DDR2G
Manufacturer:
ON Semiconductor
Quantity:
1 700
Part Number:
NSS40300DDR2G
Manufacturer:
ON/安森美
Quantity:
20 000
NSS40300DDR2G
Dual 40 V, 6.0 A, Low
V
transistors are surface mount devices featuring ultra low saturation
voltage (V
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
ON Semiconductor’s e
Typical applications are low voltage motor controls in mass storage
Halide Free
This is a Pb−Free Device
CE(sat)
CE(sat)
Rating
) and high current gain capability. These are designed
PNP Transistor
(T
A
= 25°C)
2
PowerEdge family of low V
Symbol
V
V
V
ESD
I
CEO
CBO
EBO
I
CM
C
2
PowerEdge devices to be
Max
−7.0
−3.0
−6.0
HBM Class 3B
−40
−40
MM Class C
1
CE(sat)
Unit
Vdc
Vdc
Vdc
A
A
†For information on tape and reel specifications,
NSS40300DDR2G
PNP LOW V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BASE
EQUIVALENT R
2
40300
A
Y
WW
G
(Note: Microdot may be in either location)
Device
ORDERING INFORMATION
COLLECTOR
EMITTER
DEVICE MARKING
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
http://onsemi.com
7,8
1
40 VOLTS
6.0 AMPS
CE(sat)
8
1
CASE 751
STYLE 16
8
SOIC−8
(Pb−Free)
AYWWG
Package
40300
SOIC−8
Publication Order Number:
G
BASE
1
DS(on)
4
TRANSISTOR
COLLECTOR
EMITTER
NSS40300D/D
Tape & Reel
80 mW
Shipping
5,6
2500 /
3

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NSS40300DDR2G Summary of contents

Page 1

... G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NSS40300DDR2G SOIC−8 2500 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

THERMAL CHARACTERISTICS Characteristic SINGLE HEATED Total Device Dissipation (Note 25°C A Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 25°C A Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) DUAL ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mAdc Collector −Base Breakdown Voltage (I = −0.1 mAdc Emitter −Base Breakdown Voltage (I = −0.1 mAdc, I ...

Page 4

0.20 0.15 0.10 0.05 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 800 150°C (5.0 V) 700 150°C (2.0 V) 600 25°C ...

Page 5

C (pF) ibo 150 100 EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance 10 1.0 0.1 0.01 Single Pulse Test at T 0.001 0.01 TYPICAL CHARACTERISTICS 100 90 80 ...

Page 6

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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