BFU760F,115 NXP Semiconductors, BFU760F,115 Datasheet - Page 48

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BFU760F,115

Manufacturer Part Number
BFU760F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFU760F,115

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
45GHz
Noise Figure (db Typ @ F)
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Power - Max
220mW
Dc Current Gain (hfe) (min) @ Ic, Vce
155 @ 10mA, 2V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
C-family application information
Push-pull amplifiers
Power doublers
Optical receiver
50
Application
Optical node
Optical receiver
Distribution amplifier
Line extender amplifier
Terminating amplifier
Parameters
Power gain (dB)
Slope (dB)
Composite triple beat (dBc)
Composite 2
Noise (@ f
Total current comsumption (mA)
Frequency range (MHz)
Parameters
Power gain (dB)
Slope (dB)
Composite triple beat (dBc)
Composite 2
Noise (@ f
Total current comsumption (mA)
Frequency range (MHz)
Parameters
Responsivity (V/W)
Slope (dB)
Third order intermodulation distortion (dB)
Second order intermodulation distortion (dB)
Noise (@ f
Total current consumption (mA)
Frequency range (MHz)
Connector
NXP Semiconductors RF Manual 14
MAX
MAX
MAX
nd
nd
) (dB)
) (dB)
) pA/Sqrt (Hz)
order distortion (dBc)
order distortion (dBc)
th
edition
BGY588C
range
range
range
range
range
range
max.
max.
max.
max.
max.
max.
max.
max.
max.
min.
typ.
typ.
typ.
typ.
typ.
BGE788C
BGY588C
BGD712C
0.2 - 1.7
40 - 550
CGY888C
34.5
325
-57
-62
0.5 - 1.5
40 - 750
8
18.5
-62
-63
395
7
BGO807C
40 - 870
0 - 2
800
190
-54
-71
8.5
- / SCO / FCO
BGD712C
BGE788C
0.3 - 2.3
40 - 750
34.2
305
CGD944C
-49
-52
8
40 - 870
BGO807C
1 - 2
450
-66
-67
25
5
CGY888C
40 - 870
1.5 typ.
3 typ.
35.5
-64
280
-66
CGD944C
BGO807CE
CGD942C
40 - 870
0 - 2
800
190
-53
-71
8.5
BGY835C
40 - 870
1 - 2
450
-66
-67
23
40 - 870
1.5 typ.
5
CGD942C
340
-60
-55
34
7

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