BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet - Page 9
![TRANSISTOR NPN SOT343F](/photos/16/0/160096/sot343_sml.jpg)
BFU690F,115
Manufacturer Part Number
BFU690F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BFU690F115.pdf
(12 pages)
Specifications of BFU690F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
18GHz
Noise Figure (db Typ @ F)
0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
Gain
15.5dB ~ 18.5dB
Power - Max
230mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
230 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
18 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BFU690F
Product data sheet
Document ID
BFU690F v.1
Revision history
Table 8.
Acronym
DC
DRO
Ka
LTE
NPN
RF
UMTS
Release date
20101216
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Direct Current
Dielectric Resonator Oscillator
Kurtz above
Long Term Evolution
Negative-Positive-Negative
Radio Frequency
Universal Mobile Telecommunications System
Data sheet status
Product data sheet
Rev. 1 — 16 December 2010
Change notice
-
NPN wideband silicon RF transistor
Supersedes
-
BFU690F
© NXP B.V. 2010. All rights reserved.
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