BFU690F,115 NXP Semiconductors, BFU690F,115 Datasheet - Page 9

• Manufacturer Part Number: BFU690F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU690F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 18GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
• Gain: 15.5dB ~ 18.5dB
• Power - Max: 230mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 18 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BFU690F
Product data sheet
Document ID
BFU690F v.1
Revision history
Table 8.
Acronym
DC
DRO
Ka
LTE
NPN
RF
UMTS
Release date
20101216
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Direct Current
Dielectric Resonator Oscillator
Kurtz above
Long Term Evolution
Negative-Positive-Negative
Radio Frequency
Universal Mobile Telecommunications System
Data sheet status
Product data sheet
Rev. 1 — 16 December 2010
Change notice
-
NPN wideband silicon RF transistor
Supersedes
-
BFU690F
© NXP B.V. 2010. All rights reserved.
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