BFG520/X,235 NXP Semiconductors, BFG520/X,235 Datasheet - Page 5

• Manufacturer Part Number: BFG520/X,235
• Description: TRANS RF NPN 9GHZ 15V SOT143
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X,235

• Package / Case: TO-253-4, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
I
Fig.5
C
(mW)
(pF)
P tot
C re
= 0; f = 1 MHz.
400
300
200
100
0.6
0.4
0.2
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.3 Power derating curve.
50
4
100
8
150
V CB (V)
T s ( o C)
MRA670-1
MRA672
200
Rev. 04 - 23 November 2007
12
handbook, halfpage
handbook, halfpage
V
Fig.4
Fig.6
f = 1 GHz; T
CE
(GHz)
BFG520; BFG520/X; BFG520/XR
h FE
f T
250
200
150
100
= 6 V; T
50
12
0
10
8
4
0
10
2
1
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
j
= 25 C.
= 25 C.
10
1
1
1
10
Product specification
10
I C (mA)
V CE = 6 V
V CE = 3 V
I C (mA)
MRA671
MRA673
5 of 14
10
10
2
2