BFG540W/XR,135 NXP Semiconductors, BFG540W/XR,135 Datasheet - Page 9

• Manufacturer Part Number: BFG540W/XR,135
• Description: TRANS RF NPN 9GHZ 15V SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/XR,135

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5821-2; BFG540W/XR,135

NXP Semiconductors
2000 May 23
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
f = 900 MHz; V
f = 2 GHz; V
CE
CE
= 8 V; I
= 8 V; I
C
= 10 mA; Z
C
= 10 mA; Z
unstable
region
180
180
Fig.17 Common emitter noise figure circles; typical values.
Fig.18 Common emitter noise figure circles; typical values.
o
= 50 
o
o
o
= 50 
0
0
G
135
135
135
max
135
0.2
0.2
0.2
0.2
o
o
o
o
= 9.8 dB
0.2
0.2
Γ
opt
0.5
0.5
0.5
0.5
F = 1.5 dB
F = 3 dB
G = 9 dB G = 8 dB
F = 4 dB
F = 1.5 dB
0.5
0.5
F
F
F = 3 dB
F = 2 dB
min
min
= 2.1 dB
= 1.3 dB
Γ
opt
9
90
90
90
90
1
1
1
1
1
1
o
o
o
o
stability
circle
2
2
BFG540W/X; BFG540W/XR
2
2
2
2
5
5
45
45
45
45
o
o
o
o
5
5
5
5
MLC051
MLC052
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG540W