BFG540W/XR,135 NXP Semiconductors, BFG540W/XR,135 Datasheet - Page 8

• Manufacturer Part Number: BFG540W/XR,135
• Description: TRANS RF NPN 9GHZ 15V SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/XR,135

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5821-2; BFG540W/XR,135

NXP Semiconductors
2000 May 23
handbook, halfpage
NPN 9 GHz wideband transistor
V
Fig.15 Minimum noise figure as a function of
CE
(dB)
= 8 V.
F
4
3
2
0
1
10
frequency; typical values.
2
10
3
I
C
f (MHz)
= 40 mA
10 mA
MLC050
10
4
8
handbook, halfpage
Fig.16 Associated available gain as a function of
V
CE
F min
(dB)
= 8 V.
5
4
3
2
1
0
10
40 mA
2
10 mA
frequency; typical values.
BFG540W/X; BFG540W/XR
I C = 10 mA
F min
40 mA
10
G ass
3
f (MHz)
Product specification
BFG540W
MRA761
10
−5
15
20
10
0
G ass
5
4
(dB)