PBR941B,215 NXP Semiconductors, PBR941B,215 Datasheet - Page 5

• Manufacturer Part Number: PBR941B,215
• Description: TRANSISTOR NPN UHF 50MA SOT23-3
• Manufacturer: NXP Semiconductors

Specifications of PBR941B,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 1GHz
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 6V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6386-2; PBR941B,215

Philips Semiconductors
2001 Jan 18
handbook, halfpage
handbook, halfpage
UHF wideband transistor
Fig.2
I
Fig.4
C
(pF)
(mW)
C re
= I
P tot
400
300
200
100
0.5
0.4
0.3
0.2
0.1
c
0
0
= 0; f = 1 MHz.
0
0
Power derating as a function of soldering
point temperature.
Feedback capacitance as a function of
collector-base voltage; typical values.
50
4
100
8
150
V CB (V)
T s (°C)
MDA871
MGS498
200
12
5
handbook, halfpage
handbook, halfpage
V
Fig.3
V
Fig.5
CE
CE
(GHz)
h FE
160
120
f T
= 6 V.
= 6 V; f
70
40
10
0
8
6
4
2
0
0
0
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
m
= 1 GHz; T
10
10
amb
20
20
= 25 ° C.
30
30
Preliminary specification
40
40
PBR941B
I C (mA)
I C (mA)
MCD974
MCD975
50
50