BFG425W,135 NXP Semiconductors, BFG425W,135 Datasheet - Page 8

• Manufacturer Part Number: BFG425W,135
• Description: TRANS RF NPN 25GHZ 4.5V SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG425W,135

• Package / Case: SC-82A, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 20dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 120
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 135 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Noise data
V
2010 Sep 15
handbook, full pagewidth
900
2000
CE
(MHz)
NPN 25 GHz wideband transistor
I
C
f
= 2 V; typical values.
= 25 mA; V
1
2
4
10
15
20
25
30
1
2
4
10
15
20
25
30
(mA)
I
CE
C
= 2 V; Z
0.7
0.8
1
1.4
1.6
1.9
2.1
2.3
1.3
1.2
1.2
1.6
1.9
2.2
2.5
2.8
(dB)
F
o
min
= 50 
Fig.12 Common emitter output reflection coefficient (S
0.67
0.48
0.28
0.02
0.11
0.19
0.25
0.29
0.56
0.43
0.22
0.06
0.13
0.17
0.22
0.27
180°

mag
0
−135°
135°
0.2
0.2
162.4
165.5
166.3
166.5
162.1
155.5
152.2
150.8
63.9
137.4

19.1
17.8
57.5
57.2
60.8
11.7
angle
0.2
0.5
0.5
0.40
0.27
0.24
0.19
0.18
0.18
0.19
0.19
0.36
0.25
0.18
0.19
0.20
0.20
0.21
0.25
0.5
()
r
n
−90°
90°
8
1
1
1
handbook, halfpage
3 GHz
(1) V
(2) V
Fig.13 Minimum noise figure as a function of the
F min
(dB)
2
CE
CE
3
2
1
0
0
= 2 V; f = 2 GHz.
= 2 V; f = 900 MHz.
collector current; typical values.
2
2
5
22
−45°
45°
); typical values.
40 MHz
5
5
MGG692
10
(1)
(2)
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
20
Product specification
I C (mA)
BFG425W
MGG688
30