BFR520,235 NXP Semiconductors, BFR520,235 Datasheet - Page 3

• Manufacturer Part Number: BFR520,235
• Description: TRANS NPN 15V 70MA 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR520,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Philips Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
9397 750 13397
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Table 7:
T
Symbol
V
V
V
I
P
T
T
Symbol Parameter
R
Symbol Parameter
I
h
C
C
C
f
G
C
CBO
T
j
s
FE
stg
j
CBO
CES
EBO
tot
th(j-s)
e
c
re
UM
= 25 C unless otherwise specified.
21
T
T
2
sp
sp
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
thermal resistance from junction to soldering point
collector cut-off
current
DC current gain I
emitter
capacitance
collector
capacitance
feedback
capacitance
transition
frequency
maximum
unilateral power
gain
insertion power
gain
Limiting values
Thermal characteristics
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
Rev. 03 — 1 September 2004
Conditions
I
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 MHz
I
f = 1 GHz
I
T
I
T
E
C
C
E
C
C
C
C
amb
amb
f = 900 MHz
f = 2 GHz
= 0 A; V
= i
= 20 mA; V
= i
= 0 A; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
e
c
= 25 C
= 25 C; f = 900 MHz
= 0 A; V
= 0 A; V
CB
CB
= 6 V
= 6 V;
CE
CE
CE
CE
EB
CB
Conditions
open emitter
R
open collector
up to T
= 6 V
= 6 V;
= 6 V;
= 6 V;
= 0.5 V;
= 6 V;
BE
= 0
sp
= 97 C
[1]
NPN 9 GHz wideband transistor
Conditions
Min
-
60
-
-
-
-
-
-
13
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Min
-
-
-
-
-
-
65
Typ
-
120
1
0.5
0.4
9
15
9
14
Max
20
15
2.5
70
300
150
175
BFR520
Max
50
250
-
-
-
-
-
-
-
[1]
Typ
260
Unit
V
V
V
mA
mW
C
C
3 of 13
Unit
K/W
Unit
nA
pF
pF
pF
GHz
dB
dB
dB