BLF6G22L-40BN,118 NXP Semiconductors, BLF6G22L-40BN,118 Datasheet - Page 9

• Manufacturer Part Number: BLF6G22L-40BN,118
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22L-40BN,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 19dB
• Current Rating: 10A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

NXP Semiconductors
8. Package outline
Fig 14. Package outline SOT1112A
BLF6G22L-40BN
Product data sheet
Flanged ceramic package; 2 mounting holes; 6 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1112A
Outline
version
(1)
max
nom
max
nom
min
min
H
0.183
0.148
4.65
3.76
A
U
A
2
0.045
0.035
1.14
0.89
b
A
Z
0.207
0.197
5.26
5.00
IEC
b
1
0.007
0.004
0.18
0.10
c
4
6
b
L
9.65
9.40
0.38
0.37
D
JEDEC
9.65
9.40
0.38
0.37
All information provided in this document is subject to legal disclaimers.
D
1
D
U
b
9.65
9.40
0.38
0.37
References
D
q
1
2
1
1
1
E
Rev. 1 — 30 August 2010
0
9.65
9.40
0.38
0.37
E
1
JEITA
0.045
0.035
1.14
0.89
w
F
2
scale
5
5
7
17.12
16.10
0.674
0.634
C
H
3
0.118
0.106
3.00
2.69
L
10 mm
C
F
B
p
0.130
0.115
3.30
2.92
p
w
1
0.067
0.057
1.70
1.45
Q
A
(2)
BLF6G22L-40BN
15.24
B
0.6
q
20.45
20.19
0.805
0.795
European
projection
U
1
E
1
Power LDMOS transistor
9.91
9.65
0.39
0.38
U
2
Q
0.25
0.01
w
1
© NXP B.V. 2010. All rights reserved.
c
0.51
0.02
w
2
Issue date
09-10-12
10-02-02
E
0.235
0.225
5.97
5.72
sot1112a_po
Z
SOT1112A
64
62
64
62
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