BLF6G22L-40BN,118 NXP Semiconductors, BLF6G22L-40BN,118 Datasheet - Page 2
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BLF6G22L-40BN,118
Manufacturer Part Number
BLF6G22L-40BN,118
Description
TRANS LDMOS SOT1112A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G22L-40BN118.pdf
(13 pages)
Specifications of BLF6G22L-40BN,118
Voltage - Rated
65V
Transistor Type
LDMOS (Dual)
Frequency
2.11GHz ~ 2.17GHz
Gain
19dB
Current Rating
10A
Current - Test
*
Voltage - Test
28V
Power - Output
2.5W
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22L-40BN
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
4, 5
6, 7
Type number
BLF6G22L-40BN
Symbol
V
V
V
T
T
Symbol Parameter
R
stg
j
DS
GS
GS(sense)
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
thermal resistance from junction to case T
Pinning
Ordering information
Limiting values
Thermal characteristics
drain
gate
source
sense drain
sense gate
Description
Parameter
drain-source voltage
gate-source voltage
sense gate-source voltage
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 1 — 30 August 2010
flanged ceramic package; 2 mounting holes; 6 leads
[1]
Conditions
case
Conditions
Simplified outline
= 80 °C; P
4
6
BLF6G22L-40BN
1
2
L
Power LDMOS transistor
= 12.5 W (CW)
5
7
3
Min
-
−0.5
−0.5
−65
-
Graphic symbol
© NXP B.V. 2010. All rights reserved.
2
200
Max
65
+13
+9
+150
1
3
Version
SOT1112A
4, 5
Typ Unit
1.7
sym126
Unit
V
V
V
°C
°C
2 of 13
6, 7
K/W