IXXH100N60B3 IXYS, IXXH100N60B3 Datasheet - Page 4

• Manufacturer Part Number: IXXH100N60B3
• Description: IGBT 600V 210A 830W TO247AD
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXH100N60B3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 70A
• Current - Collector (ic) (max): 210A
• Power - Max: 830W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (TO-247AD)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 210 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 830 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 220
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 100
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.80
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 150
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.8
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1000
100
100
0.1
80
70
60
50
40
30
20
10
10
10
0
1
0
1
0
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
20
= 175ºC
= 25ºC
Limit
External Lead Limit
5
Fig. 11. Forward-Bias Safe Operating Area
40
10
60
Fig. 7. Transconductance
10
Fig. 9. Capacitance
15
80
V
DS
I
V
C
CE
- Amperes
- Volts
100
- Volts
20
120
25
100
C oes
C res
C ies
140
T
30
J
= - 40ºC
160
25ºC
150ºC
35
DC
180
25µs
100µs
1ms
10ms
1000
200
40
0.001
220
200
180
160
140
120
100
0.01
80
60
40
20
16
14
12
10
0.1
0.00001
8
6
4
2
0
0
1
100
0
Fig. 12. Maximum Transient Thermal Impedance
T
R
dv / dt < 10V / ns
V
I
I
150
J
C
G
G
CE
= 150ºC
= 70A
= 10mA
= 2
= 300V
20
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
0.0001
250
40
Fig. 8. Gate Charge
300
Pulse Width - Second
Q
0.001
G
60
- NanoCoulombs
V
IXXH100N60B3
350
CE
- Volts
80
400
0.01
450
100
500
0.1
120
550
600
140
1
650