IXXH100N60B3 IXYS, IXXH100N60B3 Datasheet - Page 2

• Manufacturer Part Number: IXXH100N60B3
• Description: IGBT 600V 210A 830W TO247AD
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXH100N60B3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 70A
• Current - Collector (ic) (max): 210A
• Power - Max: 830W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (TO-247AD)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 210 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 830 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 220
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 100
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.80
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 150
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.8
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
ie
oes
res
on
of
on
off
thJC
thCS
g
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
=
= 70A, V
= 70A, V
=
= 25V, V
= 360V, R
= 360V, R
70A
60A
ADVANCE TECHNICAL INFORMATION
, V
, V
GE
GE
GE
CE
GE
= 15V
= 15V
= 15V, V
G
G
= 10V, Note 1
= 0V, f = 1MHz
= 2
= 2
4,835,592
4,881,106
J
J
Ω
Ω
= 25°C
= 150°C
CE
4,931,844
5,017,508
5,034,796
= 0.5
•
V
CES
5,049,961
5,063,307
5,187,117
Min.
5,237,481
5,381,025
5,486,715
22
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
4860
0.21
Typ.
285
143
120
150
150
200
1.9
2.0
2.3
2.8
40
83
37
60
30
70
32
60
CE
(clamp), T
Max.
0.18 °C/W
2.8
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXXH) Outline
Terminals: 1 - Gate
IXXH100N60B3
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
4.7
2.2
2.2
1.0
Millimeter
3 - Emitted
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Collector
0.205 0.225
0.232 0.252
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216