IRGP4066PBF International Rectifier, IRGP4066PBF Datasheet - Page 2

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IRGP4066PBF

Manufacturer Part Number
IRGP4066PBF
Description
IGBT TRENCH 600V 140A TO247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRGP4066PBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
140A
Power - Max
454W
Input Type
Standard
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRGP4066PbF/IRGP4066-EPbF
Notes:

ƒ
Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
(BR)CES
CE(on)
GE(th)
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
2
CC
θ
is measured at T
/∆TJ
= 80% (V
/∆T
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 10µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 10Ω.
(BR)CES
safely.
Min.
Min.
600
4.0
FULL SQUARE
5
Typ.
1040
Typ.
2465
2155
4620
3870
2815
6685
4440
260
150
200
240
245
130
1.7
2.0
2.1
-16
1.0
50
40
60
50
70
60
50
70
70
Max.
Max.
3360
3040
6400
±200
100
225
225
2.1
6.5
60
90
70
90
80
mV/°C V
mV/°C V
Units
Units
µA
nA
nC
µJ
ns
µJ
ns
pF
µs
V
V
V
V
S
V
I
I
I
V
V
V
V
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
I
R
I
R
Energy losses include tail & diode reverse recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 10Ω, V
V
Rg = 10Ω, V
C
C
C
C
C
C
C
C
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
G
G
G
G
GE
CC
CC
CC
= 75A, V
= 75A, V
= 75A, V
= 75A
= 75A, V
= 75A, V
= 75A, V
= 75A, V
=10Ω, L=200µH,T
= 175°C
= 175°C, I
= 10Ω, L = 200µH, T
= 10Ω, L = 200µH, T
= 10Ω, L = 200µH
= V
= V
= 50V, I
= 400V
= 30V
= 480V, Vp = 600V
= 400V, Vp 600V
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 0V
Conditions
GE
GE
, I
, I
C
C
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
C
GE
GE
= 100µA
= 2.0mA (25°C-175°C)
C
= 2.1mA
= 2.1mA (25°C - 175°C)
= 75A, PW = 60µs
= 15V, T
= 15V, T
= 15V, T
= 400V, V
= 400V, V
= 400V, V
= 400V, V
= 600V
= 600V, T
= 300A
= +20V to 0V
= +15V to 0V
Conditions
J
= 175°C
J
J
J
= 25°C
= 150°C
= 175°C
GE
GE
GE
GE
J
J
J
= 25°C
= 25°C
= 175°C
=15V
= 15V
= 15V
= 15V
d
d
d
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