IRGP4066PBF International Rectifier, IRGP4066PBF Datasheet

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IRGP4066PBF

Manufacturer Part Number
IRGP4066PBF
Description
IGBT TRENCH 600V 140A TO247AC
Manufacturer
International Rectifier
Datasheet

Specifications of IRGP4066PBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
140A
Power - Max
454W
Input Type
Standard
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
1
Features
• Low V
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for I
• Positive V
• Tight Parameter Distribution
• Lead Free Package
V
I
I
I
I
I
V
P
P
T
T
R
R
R
INSULATED GATE BIPOLAR TRANSISTOR
Absolute Maximum Ratings
Thermal Resistance
C
C
NOMINAL
CM
LM
J
STG
CES
GE
D
D
θJC
θCS
θJA
Low V
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
CE (ON)
CE (ON)
and Low Switching Losses
Trench IGBT Technology
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Temperature Coefficient
LM
GE
Parameter
Parameter
= 15V
GE
f
= 20V
G
n-channel
E
C
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
Gate
IRGP4066-EPbF
C
IRGP4066PbF
G
TO-247AC
10 lbf·in (1.1 N·m)
IRGP4066PbF
-55 to +175
t
SC
Max.
Typ.
G
0.24
600
140
225
300
±20
±30
454
227
–––
90
75
40
C
E
Collector
≥ 5µs, T
V
CE(on)
I
C
C(Nominal)
V
CES
Max.
IRGP4066-EPbF
typ. = 1.7V
0.33
C
–––
–––
J(max)
= 600V
TO-247AD
= 75A
www.irf.com
Emitter
= 175°C
E
10/8/2010
G
Units
Units
°C/W
C
°C
W
V
A
V
E

Related parts for IRGP4066PBF

IRGP4066PBF Summary of contents

Page 1

... CES I = 75A C(Nominal) t ≥ 5µ 175°C SC J(max typ. = 1.7V CE(on TO-247AC TO-247AD IRGP4066PbF IRGP4066-EPbF G C Gate Collector Emitter Max. 600 140 90 75 225 300 ±20 ±30 454 227 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min ...

Page 2

... IRGP4066PbF/IRGP4066-EPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... V CE (V) Fig Forward SOA ≤ 25°C, T 175° 300 250 200 150 100 (V) Fig Typ. IGBT Output Characteristics T = -40° ≤ J www.irf.com IRGP4066PbF/IRGP4066-EPbF 125 150 175 10µsec 100 1000 =15V 18V 15V 12V 10V 8. 60µs 400 300 200 100 100 125 150 T C (° ...

Page 4

... IRGP4066PbF/IRGP4066-EPbF 300 18V 15V 250 12V 10V 200 8.0V 150 100 (V) Fig Typ. IGBT Output Characteristics T = 175° 38A 75A 150A (V) Fig Typical 25°C J 300 250 25°C 200 150 100 GE, Gate-to-Emitter Voltage (V) Fig Typ. Transfer Characteristics V = 50V 60µ 60µs ≤ vs 12000 10000 175° ...

Page 5

... L = 200µ 400V 10000 1000 td OFF t R 100 (Ω) Fig Typ. Switching Time vs 175° 200µ 400V www.irf.com IRGP4066PbF/IRGP4066-EPbF 11000 9000 7000 5000 td ON 3000 1000 100 150 C = 10Ω 15V T = 175° 200µ 100 120 G = 75A; V ...

Page 6

... IRGP4066PbF/IRGP4066-EPbF 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE 0.001 ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT CES = 400V 14 V CES = 300V 100 120 140 160 Total Gate Charge (nC) Fig Typical Gate Charge vs 75A 485µH ...

Page 7

... DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) 4X DUT SCSOA Fig.C.T.3 - S.C. SOA Circuit R = VCC ICM DUT Rg Fig.C.T.5 - Resistive Load Circuit www.irf.com IRGP4066PbF/IRGP4066-EPbF VCC diode clamp / DC VCC VCC G force DUT Rg Fig.C.T.2 - RBSOA Circuit DUT L -5V DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit C force ...

Page 8

... IRGP4066PbF/IRGP4066-EPbF 600 tf 500 90 400 300 200 100 Eoff Loss -100 -3.0E-07 -1.0E-07 1.0E-07 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT.4 J -100 8 120 600 100 500 80 400 300 60 200 100 -100 -20 7.4E-06 3.0E-07 700 600 VCE ...

Page 9

... TO-247AC package is not recommended for Surface Mount Application. www.irf.com IRGP4066PbF/IRGP4066-EPbF 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & 9 ...

Page 10

... IRGP4066PbF/IRGP4066-EPbF TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 "$C $% $& Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. ...

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